Preparation method of N-type polymer field effect transistor based on bismuth contact electrode

The invention relates to the technical field of microelectronic materials and devices, in particular to a preparation method of an N-type polymer field effect transistor based on a bismuth contact electrode. The N-type polymer field effect transistor is of a top gate bottom contact structure; firstly, bismuth metal films are prepared on a substrate through a mask plate in a vacuum evaporation mode to serve as a source electrode and a drain electrode, then the surfaces of the bismuth metal films are spin-coated with organic semiconductors to serve as active layers, after annealing is finished, the surfaces of the bismuth metal films are spin-coated with insulators to serve as dielectric layers, and finally, aluminum metal films are evaporated on the dielectric layers through the mask plate to serve as gate electrodes. Compared with a traditional gold contact electrode, the contact electrode prepared by the method has the advantages that the N-type electric contact performance is obviously improved, the device