Semiconductor epitaxial structure

The invention provides a semiconductor epitaxial structure. The semiconductor epitaxial structure comprises a silicon carbide substrate, a nucleating layer, a gallium nitride buffer layer and a stacking structure, the nucleating layer is formed on the silicon carbide substrate, the gallium nitride b...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LIN ZIYAO, LIU JIAZHE, SHI YINGRU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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