Thin film deposition method

The present invention relates to a thin film deposition method, and more particularly, to a thin film deposition method which can prevent an increase in the thickness of an ultrafine thin film and a change in physical properties caused by generated particles by introducing a pulse-type plasma purge process. The thin film deposition method according to the present invention can apply an RF power source to a chamber and form a thin film on a substrate using a substrate processing apparatus that generates plasma inside the chamber, and comprises: a step of preparing a substrate inside the chamber; a thin film forming step of forming a thin film layer on the substrate by generating a first plasma inside the chamber and supplying a source gas; and a pulse-type plasma purge step of generating a second plasma having a preset duty factor into the chamber and supplying an inert gas to purge the residual source gas inside the chamber. 本发明涉及一种薄膜沉积方法，更具体而言，涉及一种可以薄膜沉积方法，通过导入脉冲型等离子体吹扫工艺，从而防止超细微薄膜的厚度增加和生成的颗粒导致的物性变化。本发明中的薄膜沉