Crystalline silicon cell photo-thermal annealing equipment

The invention discloses crystal silicon cell photo-thermal annealing equipment, and relates to the technical field of photovoltaic cell production equipment. The equipment comprises a cabinet, one side of the cabinet is provided with a material port used for feeding and taking out wafers, an anneali...

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Hauptverfasser: HU CHAO, ZHI SHAOPENG, MA CHUANBING, ZHAO JIANAN, MIN XIANGBO
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creator HU CHAO
ZHI SHAOPENG
MA CHUANBING
ZHAO JIANAN
MIN XIANGBO
description The invention discloses crystal silicon cell photo-thermal annealing equipment, and relates to the technical field of photovoltaic cell production equipment. The equipment comprises a cabinet, one side of the cabinet is provided with a material port used for feeding and taking out wafers, an annealing channel is arranged in the cabinet, a halogen tungsten lamp tube, lasers and an oscillation piece are arranged in the annealing channel, and the oscillation piece is arranged on the inner side wall of the annealing channel, connected with the lasers and used for driving the lasers to oscillate in a reciprocating mode. The randomness of laser irradiation on the surface of the wafer is improved; the positions of the lamp tube and the light radiation device can be changed during annealing, so that the irradiation angles of the lamp tube and the light radiation device on the crystalline silicon film are changed, the irradiation randomness is improved, light generated by the lamp tube and the light radiation device c
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN116053352A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN116053352A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN116053352A3</originalsourceid><addsrcrecordid>eNrjZLByLqosLknMycnMS1UozszJTM7PU0hOzclRKMjIL8nXLclILcpNzFFIzMtLTQQqSldILSzNLMhNzSvhYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GhmYGpsbGpkaOxsSoAQC8Qy-Z</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Crystalline silicon cell photo-thermal annealing equipment</title><source>esp@cenet</source><creator>HU CHAO ; ZHI SHAOPENG ; MA CHUANBING ; ZHAO JIANAN ; MIN XIANGBO</creator><creatorcontrib>HU CHAO ; ZHI SHAOPENG ; MA CHUANBING ; ZHAO JIANAN ; MIN XIANGBO</creatorcontrib><description>The invention discloses crystal silicon cell photo-thermal annealing equipment, and relates to the technical field of photovoltaic cell production equipment. The equipment comprises a cabinet, one side of the cabinet is provided with a material port used for feeding and taking out wafers, an annealing channel is arranged in the cabinet, a halogen tungsten lamp tube, lasers and an oscillation piece are arranged in the annealing channel, and the oscillation piece is arranged on the inner side wall of the annealing channel, connected with the lasers and used for driving the lasers to oscillate in a reciprocating mode. The randomness of laser irradiation on the surface of the wafer is improved; the positions of the lamp tube and the light radiation device can be changed during annealing, so that the irradiation angles of the lamp tube and the light radiation device on the crystalline silicon film are changed, the irradiation randomness is improved, light generated by the lamp tube and the light radiation device c</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230502&amp;DB=EPODOC&amp;CC=CN&amp;NR=116053352A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230502&amp;DB=EPODOC&amp;CC=CN&amp;NR=116053352A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HU CHAO</creatorcontrib><creatorcontrib>ZHI SHAOPENG</creatorcontrib><creatorcontrib>MA CHUANBING</creatorcontrib><creatorcontrib>ZHAO JIANAN</creatorcontrib><creatorcontrib>MIN XIANGBO</creatorcontrib><title>Crystalline silicon cell photo-thermal annealing equipment</title><description>The invention discloses crystal silicon cell photo-thermal annealing equipment, and relates to the technical field of photovoltaic cell production equipment. The equipment comprises a cabinet, one side of the cabinet is provided with a material port used for feeding and taking out wafers, an annealing channel is arranged in the cabinet, a halogen tungsten lamp tube, lasers and an oscillation piece are arranged in the annealing channel, and the oscillation piece is arranged on the inner side wall of the annealing channel, connected with the lasers and used for driving the lasers to oscillate in a reciprocating mode. The randomness of laser irradiation on the surface of the wafer is improved; the positions of the lamp tube and the light radiation device can be changed during annealing, so that the irradiation angles of the lamp tube and the light radiation device on the crystalline silicon film are changed, the irradiation randomness is improved, light generated by the lamp tube and the light radiation device c</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLByLqosLknMycnMS1UozszJTM7PU0hOzclRKMjIL8nXLclILcpNzFFIzMtLTQQqSldILSzNLMhNzSvhYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GhmYGpsbGpkaOxsSoAQC8Qy-Z</recordid><startdate>20230502</startdate><enddate>20230502</enddate><creator>HU CHAO</creator><creator>ZHI SHAOPENG</creator><creator>MA CHUANBING</creator><creator>ZHAO JIANAN</creator><creator>MIN XIANGBO</creator><scope>EVB</scope></search><sort><creationdate>20230502</creationdate><title>Crystalline silicon cell photo-thermal annealing equipment</title><author>HU CHAO ; ZHI SHAOPENG ; MA CHUANBING ; ZHAO JIANAN ; MIN XIANGBO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN116053352A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HU CHAO</creatorcontrib><creatorcontrib>ZHI SHAOPENG</creatorcontrib><creatorcontrib>MA CHUANBING</creatorcontrib><creatorcontrib>ZHAO JIANAN</creatorcontrib><creatorcontrib>MIN XIANGBO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HU CHAO</au><au>ZHI SHAOPENG</au><au>MA CHUANBING</au><au>ZHAO JIANAN</au><au>MIN XIANGBO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Crystalline silicon cell photo-thermal annealing equipment</title><date>2023-05-02</date><risdate>2023</risdate><abstract>The invention discloses crystal silicon cell photo-thermal annealing equipment, and relates to the technical field of photovoltaic cell production equipment. The equipment comprises a cabinet, one side of the cabinet is provided with a material port used for feeding and taking out wafers, an annealing channel is arranged in the cabinet, a halogen tungsten lamp tube, lasers and an oscillation piece are arranged in the annealing channel, and the oscillation piece is arranged on the inner side wall of the annealing channel, connected with the lasers and used for driving the lasers to oscillate in a reciprocating mode. The randomness of laser irradiation on the surface of the wafer is improved; the positions of the lamp tube and the light radiation device can be changed during annealing, so that the irradiation angles of the lamp tube and the light radiation device on the crystalline silicon film are changed, the irradiation randomness is improved, light generated by the lamp tube and the light radiation device c</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Crystalline silicon cell photo-thermal annealing equipment
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T17%3A47%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HU%20CHAO&rft.date=2023-05-02&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN116053352A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true