Epitaxial growth pretreatment method of deep hole structure

The invention provides an epitaxial growth pretreatment method of a deep hole structure, which comprises the following steps: providing a substrate, and etching the substrate to form the deep hole structure; within two hours after etching, utilizing etching gas ammonium fluoride (NH4F) and ammonium...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BAO SAISAI, WANG YONG, MA HANJUN, YANG DEMING, PENG YONG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES
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