Method for testing surface recombination of crystalline silicon

Method for testing surface recombination of crystalline silicon

The invention relates to the technical field of solar cells, and discloses a crystalline silicon surface recombination test method, which comprises the following steps: preparing a silicon wafer sample comprising a calibration area and a test area; testing to obtain the excess carrier concentration...

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Hauptverfasser: DU ZHEREN, ZHANG GENG, BAO JIE, JI GENHUA, SHIM SEUNGHWAN, HUANG CE
Format: Patent
Sprache:chi ; eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator DU ZHEREN
ZHANG GENG
BAO JIE
JI GENHUA
SHIM SEUNGHWAN
HUANG CE
description The invention relates to the technical field of solar cells, and discloses a crystalline silicon surface recombination test method, which comprises the following steps: preparing a silicon wafer sample comprising a calibration area and a test area; testing to obtain the excess carrier concentration value delta n of the calibration area under different light intensities; testing to obtain spatially resolved photoluminescence PL brightness values of the whole silicon wafer sample under different light intensities; obtaining a calibration constant C according to the average delta n and the average PL brightness value of the calibration area; according to the C and the spatial resolution PL brightness value, spatial resolution delta n of the whole silicon wafer sample under different light intensities is obtained; according to the C and the spatial resolution delta n, obtaining the spatial resolution minority carrier lifetime tau eff of the whole silicon wafer sample under different light intensities; and accordi
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method for testing surface recombination of crystalline silicon
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