Photoelectric detector, preparation method thereof, chip and optical device

The invention discloses a photoelectric detector (10), a preparation method thereof, a chip (100) and an optical device. The photoelectric detector (10) comprises a substrate (11), a first electrode contact layer (12), a photosensitive layer (13), a second electrode contact layer (14), a passivation...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: CAO JUNKAI, CAO GAOQI
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The invention discloses a photoelectric detector (10), a preparation method thereof, a chip (100) and an optical device. The photoelectric detector (10) comprises a substrate (11), a first electrode contact layer (12), a photosensitive layer (13), a second electrode contact layer (14), a passivation layer (15), a first electrode (161) and a second electrode (162), wherein the first electrode contact layer (12), the photosensitive layer (13), the second electrode contact layer (14) and the passivation layer (15) are sequentially stacked on the substrate (11); the photoelectric detector (10) further comprises a through hole (V0) at least penetrating through the photosensitive layer (13) and the second electrode contact layer (14). The first electrode contact layer (12) and the second electrode contact layer (14) are doped semiconductor layers with opposite polarities; the first electrode (161) and the second electrode (162) are mutually insulated, the first electrode (161) is electrically connected with the fir