Page buffer, memory device including same, and method of operating same

The invention relates to a page buffer, a memory device including the same, and a method of operating the same. An electronic device, and more particularly, a page buffer, is provided. The page buffer includes: a sensing node configured to sense a potential of a bit line coupled to a memory cell; a pre-charge circuit coupled to the sense node and configured to pre-charge a potential of the sense node to a first voltage during an evaluation operation on the memory cell; a discharge circuit coupled to the sensing node and configured to discharge a potential of the sensing node from a first voltage to a second voltage; and a latch circuit coupled to the discharge circuit and configured to store data sensed from the memory cell therein based on a comparison result of the potential of the sensing node and a reference voltage after the potential of the sensing node is discharged to the second voltage and a predetermined period has elapsed. 本申请涉及页缓冲器、包括页缓冲器的存储器装置及其操作方法。提供了电子装置，并且更具体地，页缓冲器。该页缓冲器包括：感测节点，其被配置为感测联接至存储器单