Semiconductor device structure

The semiconductor device structure comprises a passivation layer, a first conductor plate layer arranged on the passivation layer, a second conductor plate layer arranged on the first conductor layer, a third conductor plate layer arranged on the second conductor layer and a fourth conductor plate layer arranged on the third conductor layer. The second conductor plate layer surrounds the first conductor plate layer, and the fourth conductor plate layer surrounds the third conductor plate layer. When the device structure is used for a back-end process passive device, leakage and breakdown caused by a corner discharge effect are reduced. 根据本公开的半导体器件结构包括钝化层、设置在钝化层上的第一导体板层、设置在第一导体层上的第二导体板层、设置在第二导体层上的第三导体板层以及设置在第三导体层上的第四导体板层。第二导体板层包围第一导体板层，第四导体板层包围第三导体板层。该器件结构在用于后段制程无源器件时，减少因角部放电效应引起的泄漏和击穿。