SiC DMOSFET device integrated with HJD and preparation method thereof

The invention discloses a SiC DMOSFET device integrated with an HJD and a preparation method of the SiC DMOSFET device. The SiC DMOSFET device comprises a metalized drain electrode, an N + substrate region and an N-epitaxial region which are sequentially arranged in a stacked mode from bottom to top...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ZHANG YUMING, HE YANJING, GONG XIAOWU, MAO XUENI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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