Formation method of semiconductor structure

A forming method of a semiconductor structure comprises the steps that a to-be-etched layer is provided, and the to-be-etched layer comprises a first region and a second region; forming a plurality of first core layers which are separated along a first direction parallel to the surface of the substr...

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Bibliographische Detailangaben

1. Verfasser:	ZHENG ERHU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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