Film bulk acoustic resonator based on size effect and application thereof
The invention discloses a film bulk acoustic resonator based on a size effect and application thereof. The film bulk acoustic resonator based on the size effect comprises a first electrode and a second electrode which are sequentially stacked on a resonant cavity, and a piezoelectric layer is arrang...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a film bulk acoustic resonator based on a size effect and application thereof. The film bulk acoustic resonator based on the size effect comprises a first electrode and a second electrode which are sequentially stacked on a resonant cavity, and a piezoelectric layer is arranged between the first electrode and the second electrode; and an insertion layer with a nanoscale thickness is also arranged between the first electrode and the second electrode. According to the FBAR temperature sensor provided by the embodiment of the invention, the insertion layer with the nanoscale thickness is inserted into the FBAR, so that the detection sensitivity of the FBAR temperature sensor is greatly improved on the basis that the resonant frequency of a device is not obviously reduced.
本发明公开了一种基于尺寸效应的薄膜体声波谐振器及其应用。所述基于尺寸效应的薄膜体声波谐振器包括依次叠设在谐振腔上的的第一电极和第二电极,所述第一电极与第二电极之间设置有压电层;所述第一电极和第二电极之间还设置有纳米级厚度的插入层。本发明实施例提供的一种FBAR温度传感器,通过在FBAR中插入一层纳米级厚度的插入层,在不明显降低器件谐振频率的基础上,大幅提高了FBAR温度传感器的探测灵敏度。 |
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