Semiconductor device and preparation method thereof
The invention discloses a semiconductor device and a preparation method thereof, and the semiconductor device comprises a substrate layer; the epitaxial layer is located on the substrate layer and comprises an active region and a terminal region surrounding the active region; the field limiting ring...
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| creator | WEN JIAPING HUANG HAOYI SHI WENHUA |
| description | The invention discloses a semiconductor device and a preparation method thereof, and the semiconductor device comprises a substrate layer; the epitaxial layer is located on the substrate layer and comprises an active region and a terminal region surrounding the active region; the field limiting rings are arranged in the terminal region of the epitaxial layer at intervals; the junction termination extension regions are located in the terminal region at intervals, the depth of the junction termination extension regions is smaller than that of the field limiting rings, and at least part of the junction termination extension regions are located among the field limiting rings; the epitaxial layer between the adjacent junction termination extension regions forms a current cut-off region, and the conduction type of the current cut-off region is opposite to the conduction type of the field limiting rings and the junction termination extension regions. The semiconductor device is high in reliability and stability.
一种半 |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN115714135A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN115714135A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN115714135A3</originalsourceid><addsrcrecordid>eNrjZDAOTs3NTM7PSylNLskvUkhJLctMTlVIzEtRKChKLUgsSizJzM9TyE0tychPUSjJSC1KzU_jYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GhqbmhiaGxqaOxsSoAQArHizH</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device and preparation method thereof</title><source>esp@cenet</source><creator>WEN JIAPING ; HUANG HAOYI ; SHI WENHUA</creator><creatorcontrib>WEN JIAPING ; HUANG HAOYI ; SHI WENHUA</creatorcontrib><description>The invention discloses a semiconductor device and a preparation method thereof, and the semiconductor device comprises a substrate layer; the epitaxial layer is located on the substrate layer and comprises an active region and a terminal region surrounding the active region; the field limiting rings are arranged in the terminal region of the epitaxial layer at intervals; the junction termination extension regions are located in the terminal region at intervals, the depth of the junction termination extension regions is smaller than that of the field limiting rings, and at least part of the junction termination extension regions are located among the field limiting rings; the epitaxial layer between the adjacent junction termination extension regions forms a current cut-off region, and the conduction type of the current cut-off region is opposite to the conduction type of the field limiting rings and the junction termination extension regions. The semiconductor device is high in reliability and stability.
一种半</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230224&DB=EPODOC&CC=CN&NR=115714135A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230224&DB=EPODOC&CC=CN&NR=115714135A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WEN JIAPING</creatorcontrib><creatorcontrib>HUANG HAOYI</creatorcontrib><creatorcontrib>SHI WENHUA</creatorcontrib><title>Semiconductor device and preparation method thereof</title><description>The invention discloses a semiconductor device and a preparation method thereof, and the semiconductor device comprises a substrate layer; the epitaxial layer is located on the substrate layer and comprises an active region and a terminal region surrounding the active region; the field limiting rings are arranged in the terminal region of the epitaxial layer at intervals; the junction termination extension regions are located in the terminal region at intervals, the depth of the junction termination extension regions is smaller than that of the field limiting rings, and at least part of the junction termination extension regions are located among the field limiting rings; the epitaxial layer between the adjacent junction termination extension regions forms a current cut-off region, and the conduction type of the current cut-off region is opposite to the conduction type of the field limiting rings and the junction termination extension regions. The semiconductor device is high in reliability and stability.
一种半</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAOTs3NTM7PSylNLskvUkhJLctMTlVIzEtRKChKLUgsSizJzM9TyE0tychPUSjJSC1KzU_jYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GhqbmhiaGxqaOxsSoAQArHizH</recordid><startdate>20230224</startdate><enddate>20230224</enddate><creator>WEN JIAPING</creator><creator>HUANG HAOYI</creator><creator>SHI WENHUA</creator><scope>EVB</scope></search><sort><creationdate>20230224</creationdate><title>Semiconductor device and preparation method thereof</title><author>WEN JIAPING ; HUANG HAOYI ; SHI WENHUA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN115714135A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>WEN JIAPING</creatorcontrib><creatorcontrib>HUANG HAOYI</creatorcontrib><creatorcontrib>SHI WENHUA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WEN JIAPING</au><au>HUANG HAOYI</au><au>SHI WENHUA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device and preparation method thereof</title><date>2023-02-24</date><risdate>2023</risdate><abstract>The invention discloses a semiconductor device and a preparation method thereof, and the semiconductor device comprises a substrate layer; the epitaxial layer is located on the substrate layer and comprises an active region and a terminal region surrounding the active region; the field limiting rings are arranged in the terminal region of the epitaxial layer at intervals; the junction termination extension regions are located in the terminal region at intervals, the depth of the junction termination extension regions is smaller than that of the field limiting rings, and at least part of the junction termination extension regions are located among the field limiting rings; the epitaxial layer between the adjacent junction termination extension regions forms a current cut-off region, and the conduction type of the current cut-off region is opposite to the conduction type of the field limiting rings and the junction termination extension regions. The semiconductor device is high in reliability and stability.
一种半</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Semiconductor device and preparation method thereof |
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