Semiconductor element
A semiconductor device includes a substrate, a first photonic crystal structure, a first dielectric structure, and a second semiconductor structure. The first photonic crystal structure is located on the substrate and comprises a first semiconductor structure. The first semiconductor structure is pr...
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creator | PAN BAIZHOU LI SHICHANG GUO SHENGFENG XUE WEIREN |
description | A semiconductor device includes a substrate, a first photonic crystal structure, a first dielectric structure, and a second semiconductor structure. The first photonic crystal structure is located on the substrate and comprises a first semiconductor structure. The first semiconductor structure is provided with a plurality of first holes arranged periodically. The first dielectric structure is filled in one or more of the plurality of first holes. The second semiconductor structure is located on the first photonic crystal structure. Wherein the first dielectric structure comprises a first dielectric layer and a second dielectric layer, the first dielectric layer has a first refractive index, and the second dielectric layer has a second refractive index different from the first refractive index.
本发明公开一种半导体元件,其包括基底、第一光子晶体结构、第一介电结构、以及第二半导体结构。第一光子晶体结构位于基底上且包含第一半导体结构。第一半导体结构中具有呈周期性排列的多个第一孔洞。第一介电结构填充于多个第一孔洞的一个或多个中。第二半导体结构位于第一光子晶体结构上。其中,第一介电结构包含第一介电层及第二介电层,且第一介电层具有第一折射率,第二介电层具有第二折射率不同于第一折射率。 |
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本发明公开一种半导体元件,其包括基底、第一光子晶体结构、第一介电结构、以及第二半导体结构。第一光子晶体结构位于基底上且包含第一半导体结构。第一半导体结构中具有呈周期性排列的多个第一孔洞。第一介电结构填充于多个第一孔洞的一个或多个中。第二半导体结构位于第一光子晶体结构上。其中,第一介电结构包含第一介电层及第二介电层,且第一介电层具有第一折射率,第二介电层具有第二折射率不同于第一折射率。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230203&DB=EPODOC&CC=CN&NR=115692558A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230203&DB=EPODOC&CC=CN&NR=115692558A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PAN BAIZHOU</creatorcontrib><creatorcontrib>LI SHICHANG</creatorcontrib><creatorcontrib>GUO SHENGFENG</creatorcontrib><creatorcontrib>XUE WEIREN</creatorcontrib><title>Semiconductor element</title><description>A semiconductor device includes a substrate, a first photonic crystal structure, a first dielectric structure, and a second semiconductor structure. The first photonic crystal structure is located on the substrate and comprises a first semiconductor structure. The first semiconductor structure is provided with a plurality of first holes arranged periodically. The first dielectric structure is filled in one or more of the plurality of first holes. The second semiconductor structure is located on the first photonic crystal structure. Wherein the first dielectric structure comprises a first dielectric layer and a second dielectric layer, the first dielectric layer has a first refractive index, and the second dielectric layer has a second refractive index different from the first refractive index.
本发明公开一种半导体元件,其包括基底、第一光子晶体结构、第一介电结构、以及第二半导体结构。第一光子晶体结构位于基底上且包含第一半导体结构。第一半导体结构中具有呈周期性排列的多个第一孔洞。第一介电结构填充于多个第一孔洞的一个或多个中。第二半导体结构位于第一光子晶体结构上。其中,第一介电结构包含第一介电层及第二介电层,且第一介电层具有第一折射率,第二介电层具有第二折射率不同于第一折射率。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBANTs3NTM7PSylNLskvUkjNSc1NzSvhYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GhqZmlkamphaOxsSoAQCSgiF5</recordid><startdate>20230203</startdate><enddate>20230203</enddate><creator>PAN BAIZHOU</creator><creator>LI SHICHANG</creator><creator>GUO SHENGFENG</creator><creator>XUE WEIREN</creator><scope>EVB</scope></search><sort><creationdate>20230203</creationdate><title>Semiconductor element</title><author>PAN BAIZHOU ; LI SHICHANG ; GUO SHENGFENG ; XUE WEIREN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN115692558A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>PAN BAIZHOU</creatorcontrib><creatorcontrib>LI SHICHANG</creatorcontrib><creatorcontrib>GUO SHENGFENG</creatorcontrib><creatorcontrib>XUE WEIREN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PAN BAIZHOU</au><au>LI SHICHANG</au><au>GUO SHENGFENG</au><au>XUE WEIREN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor element</title><date>2023-02-03</date><risdate>2023</risdate><abstract>A semiconductor device includes a substrate, a first photonic crystal structure, a first dielectric structure, and a second semiconductor structure. The first photonic crystal structure is located on the substrate and comprises a first semiconductor structure. The first semiconductor structure is provided with a plurality of first holes arranged periodically. The first dielectric structure is filled in one or more of the plurality of first holes. The second semiconductor structure is located on the first photonic crystal structure. Wherein the first dielectric structure comprises a first dielectric layer and a second dielectric layer, the first dielectric layer has a first refractive index, and the second dielectric layer has a second refractive index different from the first refractive index.
本发明公开一种半导体元件,其包括基底、第一光子晶体结构、第一介电结构、以及第二半导体结构。第一光子晶体结构位于基底上且包含第一半导体结构。第一半导体结构中具有呈周期性排列的多个第一孔洞。第一介电结构填充于多个第一孔洞的一个或多个中。第二半导体结构位于第一光子晶体结构上。其中,第一介电结构包含第一介电层及第二介电层,且第一介电层具有第一折射率,第二介电层具有第二折射率不同于第一折射率。</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Semiconductor element |
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