Method for preparing hexagonal boron nitride film through chemical vapor deposition under normal pressure
According to the method for preparing the hexagonal boron nitride thin film through chemical vapor deposition under the normal pressure, the surface of the copper foil obtained after ultrasonic cleaning, electrochemical polishing, chemical corrosion and high-temperature annealing is smooth and low i...
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| creator | GAO GUANGCUN WANG JIEQIONG |
| description | According to the method for preparing the hexagonal boron nitride thin film through chemical vapor deposition under the normal pressure, the surface of the copper foil obtained after ultrasonic cleaning, electrochemical polishing, chemical corrosion and high-temperature annealing is smooth and low in roughness and has few nucleation sites, necessary conditions are provided for growth of the large-size and high-quality hexagonal boron nitride thin film H-BN, and the method is suitable for large-scale production of the hexagonal boron nitride thin film. According to the method, a substrate is treated to be in a state suitable for growth of H-BN through reasonable matching of multiple treatment modes, appropriate growth parameters of the H-BN are analyzed and adjusted through analysis of thermodynamics and dynamics in the chemical vapor deposition process, and the large-size and high-quality H-BN is obtained under the normal-pressure environment and the low-airflow condition. Due to low-airflow growth, the use o |
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According to the method, a substrate is treated to be in a state suitable for growth of H-BN through reasonable matching of multiple treatment modes, appropriate growth parameters of the H-BN are analyzed and adjusted through analysis of thermodynamics and dynamics in the chemical vapor deposition process, and the large-size and high-quality H-BN is obtained under the normal-pressure environment and the low-airflow condition. Due to low-airflow growth, the use o</description><language>chi ; eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS ANDNON-FERROUS ALLOYS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; CLEANING ; CLEANING IN GENERAL ; CLEANING OR DEGREASING OF METALLIC MATERIAL BY CHEMICALMETHODS OTHER THAN ELECTROLYSIS ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; FERROUS OR NON-FERROUS ALLOYS ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; PERFORMING OPERATIONS ; PREVENTION OF FOULING IN GENERAL ; PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROMOBJECTS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; TRANSPORTING ; TREATMENT OF ALLOYS OR NON-FERROUS METALS ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230117&DB=EPODOC&CC=CN&NR=115613130A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230117&DB=EPODOC&CC=CN&NR=115613130A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GAO GUANGCUN</creatorcontrib><creatorcontrib>WANG JIEQIONG</creatorcontrib><title>Method for preparing hexagonal boron nitride film through chemical vapor deposition under normal pressure</title><description>According to the method for preparing the hexagonal boron nitride thin film through chemical vapor deposition under the normal pressure, the surface of the copper foil obtained after ultrasonic cleaning, electrochemical polishing, chemical corrosion and high-temperature annealing is smooth and low in roughness and has few nucleation sites, necessary conditions are provided for growth of the large-size and high-quality hexagonal boron nitride thin film H-BN, and the method is suitable for large-scale production of the hexagonal boron nitride thin film. According to the method, a substrate is treated to be in a state suitable for growth of H-BN through reasonable matching of multiple treatment modes, appropriate growth parameters of the H-BN are analyzed and adjusted through analysis of thermodynamics and dynamics in the chemical vapor deposition process, and the large-size and high-quality H-BN is obtained under the normal-pressure environment and the low-airflow condition. 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According to the method, a substrate is treated to be in a state suitable for growth of H-BN through reasonable matching of multiple treatment modes, appropriate growth parameters of the H-BN are analyzed and adjusted through analysis of thermodynamics and dynamics in the chemical vapor deposition process, and the large-size and high-quality H-BN is obtained under the normal-pressure environment and the low-airflow condition. Due to low-airflow growth, the use o</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS ANDNON-FERROUS ALLOYS CHEMICAL SURFACE TREATMENT CHEMISTRY CLEANING CLEANING IN GENERAL CLEANING OR DEGREASING OF METALLIC MATERIAL BY CHEMICALMETHODS OTHER THAN ELECTROLYSIS COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROMOBJECTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TRANSPORTING TREATMENT OF ALLOYS OR NON-FERROUS METALS UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Method for preparing hexagonal boron nitride film through chemical vapor deposition under normal pressure |
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