Semiconductor element

A semiconductor device includes a semiconductor stack including an active layer, a first semiconductor structure, a second semiconductor structure, a third semiconductor layer, a dielectric layer, and a reflective layer under the third semiconductor layer. The first semiconductor structure is provided with a first surface, the first surface comprises a first part and a second part, the first surface is provided with a first area, the third semiconductor layer is connected with the first part and is provided with a second area, the dielectric layer is connected with the second part, the dielectric layer is provided with a plurality of open pores, and the plurality of open pores are provided with a third area; wherein the ratio of the second area to the first area is 0.1-0.7, and the ratio of the third area to the first area is less than 0.2. 本发明公开一半导体元件，其包含有半导体叠层，半导体叠层包含一主动层、一第一半导体结构、一第二半导体结构、一第三半导体层、一介电层以及一位于第三半导体层下的反射层；第一半导体结构具有一第一表面，第一表面包含一第一部分以及一第二部分，且第一表面具有一第一面积，第三半导体层连接第一部分并具有一第二面积，介电层连接第二部分，且介电层具有多个开孔，多