Method for removing particle contamination in groove after wafer CMP

The invention provides a method for removing particle contamination in a groove after wafer CMP. The method comprises the following steps that S1, a silicon dioxide thin layer is deposited on the surface of a wafer; s2, silicon dioxide outside the side wall of the wafer groove is etched through a dr...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CAI YUSHAN, SUN XUAN, LIU YAOCONG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLEANING CLEANING IN GENERAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL SEMICONDUCTOR DEVICES TRANSPORTING
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