Self-heating effect measurement method and simulation system based on SPICE model
The invention belongs to the technical field of semiconductor simulation, and mainly provides a self-heating effect measurement method and simulation system based on an SPICE model, and the method comprises the steps: firstly building a first measurement structure and a second measurement structure...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The invention belongs to the technical field of semiconductor simulation, and mainly provides a self-heating effect measurement method and simulation system based on an SPICE model, and the method comprises the steps: firstly building a first measurement structure and a second measurement structure based on a reference field effect transistor; a first current and voltage curve and a second current and voltage curve are respectively generated under the first measurement structure and the second measurement structure; then corresponding self-heating effect parameters are generated based on the first current and voltage curve and the second current and voltage curve, and exponential formula parameters applied to the reference field effect transistor are determined according to the self-heating effect parameters; and the exponential formula parameters are written into the model card, so that the model card based on the SPICE model simulates the self-heating effect of the field effect transistor, and the self-heat |
---|