SEMICONDUCTOR DEVICE AND VOLTAGE CONTROL METHOD
Provided is a semiconductor device capable of quickly stabilizing a generated voltage. The semiconductor device includes: an error amplifier (AMP1) that generates an error voltage according to a difference between an output voltage (VH) and a reference voltage (VREFH); a drive transistor (MP11) havi...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | Provided is a semiconductor device capable of quickly stabilizing a generated voltage. The semiconductor device includes: an error amplifier (AMP1) that generates an error voltage according to a difference between an output voltage (VH) and a reference voltage (VREFH); a drive transistor (MP11) having a gate to which the error voltage is supplied and a drain or source to which the output voltage (VH) is output; a first switch (MP13) that adjusts the voltage of the gate of the drive transistor (MP11) so that the state of the drive transistor (MP11) tends to an off state by being brought into an on state; a load circuit to which the output voltage (VH) is supplied; and a control unit that controls the operation sequence of the load circuit and turns the first switch (MP13) on during a first period including the timing at which the load of the load circuit changes.
提供能够使所生成的电压迅速地稳定的半导体装置。半导体装置具备:误差放大器(AMP1),生成与输出电压(VH)和基准电压(VREFH)之差相应的误差电压;驱动晶体管(MP11),具有被供给误差电压的栅极和输出输出电压(VH)的漏极或者源极;第1开关(MP13),通过成为接通状态,以使驱动晶体管(MP |
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