METHOD AND APPARATUS FOR MANUFACTURING EDGE STRUCTURE OF SEMICONDUCTOR DEVICE
The invention relates to a method for producing an edge structure of a semiconductor component, comprising the following steps: providing a semiconductor body (1) which has at least two main surfaces (3, 4) which are spaced apart from one another and each have an edge (5, 6) between which an edge su...
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| creator | KELLNER-WERDHAUSEN ULRICH GAMMON THOMAS BARTHELMESS REINER SOMMER STEFAN |
| description | The invention relates to a method for producing an edge structure of a semiconductor component, comprising the following steps: providing a semiconductor body (1) which has at least two main surfaces (3, 4) which are spaced apart from one another and each have an edge (5, 6) between which an edge surface (7) extends; and etching the predetermined edge contour while simultaneously rotating the semiconductor body (1) about the axis of rotation (2) by applying a chemical etchant to the edge surface (7) in a targeted manner by means of an etchant jet (11). In the case of a predetermined jet cross-section (12), the etchant jet (11) is guided tangentially in alignment with the edge surface (7) such that the etchant jet (11) hits the edge surface (7) only with a portion of its jet cross-section (12). The invention further relates to a device (20, 30) for producing an edge structure of a semiconductor component.
本发明涉及一种用于制造半导体器件的边缘结构的方法，其具有步骤：提供半导体本体（1），所述半导体本体（1）具有至少两个彼此间隔开的主面（3，4），所述主面（3，4）分别具有边缘（5，6），边缘面（7）在所述边缘（5 |
| format | Patent |
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本发明涉及一种用于制造半导体器件的边缘结构的方法，其具有步骤：提供半导体本体（1），所述半导体本体（1）具有至少两个彼此间隔开的主面（3，4），所述主面（3，4）分别具有边缘（5，6），边缘面（7）在所述边缘（5</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221223&DB=EPODOC&CC=CN&NR=115513048A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221223&DB=EPODOC&CC=CN&NR=115513048A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KELLNER-WERDHAUSEN ULRICH</creatorcontrib><creatorcontrib>GAMMON THOMAS</creatorcontrib><creatorcontrib>BARTHELMESS REINER</creatorcontrib><creatorcontrib>SOMMER STEFAN</creatorcontrib><title>METHOD AND APPARATUS FOR MANUFACTURING EDGE STRUCTURE OF SEMICONDUCTOR DEVICE</title><description>The invention relates to a method for producing an edge structure of a semiconductor component, comprising the following steps: providing a semiconductor body (1) which has at least two main surfaces (3, 4) which are spaced apart from one another and each have an edge (5, 6) between which an edge surface (7) extends; and etching the predetermined edge contour while simultaneously rotating the semiconductor body (1) about the axis of rotation (2) by applying a chemical etchant to the edge surface (7) in a targeted manner by means of an etchant jet (11). In the case of a predetermined jet cross-section (12), the etchant jet (11) is guided tangentially in alignment with the edge surface (7) such that the etchant jet (11) hits the edge surface (7) only with a portion of its jet cross-section (12). The invention further relates to a device (20, 30) for producing an edge structure of a semiconductor component.
本发明涉及一种用于制造半导体器件的边缘结构的方法，其具有步骤：提供半导体本体（1），所述半导体本体（1）具有至少两个彼此间隔开的主面（3，4），所述主面（3，4）分别具有边缘（5，6），边缘面（7）在所述边缘（5</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPD1dQ3x8HdRcPQD4oAAxyDHkNBgBTf_IAVfR79QN0fnkNAgTz93BVcXd1eF4JCgUJCAq4K_m0Kwq6-ns7-fC1AEqNrFNczT2ZWHgTUtMac4lRdKczMourmGOHvophbkx6cWFyQmp-allsQ7-xkampoaGhuYWDgaE6MGAPY9LlY</recordid><startdate>20221223</startdate><enddate>20221223</enddate><creator>KELLNER-WERDHAUSEN ULRICH</creator><creator>GAMMON THOMAS</creator><creator>BARTHELMESS REINER</creator><creator>SOMMER STEFAN</creator><scope>EVB</scope></search><sort><creationdate>20221223</creationdate><title>METHOD AND APPARATUS FOR MANUFACTURING EDGE STRUCTURE OF SEMICONDUCTOR DEVICE</title><author>KELLNER-WERDHAUSEN ULRICH ; GAMMON THOMAS ; BARTHELMESS REINER ; SOMMER STEFAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN115513048A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KELLNER-WERDHAUSEN ULRICH</creatorcontrib><creatorcontrib>GAMMON THOMAS</creatorcontrib><creatorcontrib>BARTHELMESS REINER</creatorcontrib><creatorcontrib>SOMMER STEFAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KELLNER-WERDHAUSEN ULRICH</au><au>GAMMON THOMAS</au><au>BARTHELMESS REINER</au><au>SOMMER STEFAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD AND APPARATUS FOR MANUFACTURING EDGE STRUCTURE OF SEMICONDUCTOR DEVICE</title><date>2022-12-23</date><risdate>2022</risdate><abstract>The invention relates to a method for producing an edge structure of a semiconductor component, comprising the following steps: providing a semiconductor body (1) which has at least two main surfaces (3, 4) which are spaced apart from one another and each have an edge (5, 6) between which an edge surface (7) extends; and etching the predetermined edge contour while simultaneously rotating the semiconductor body (1) about the axis of rotation (2) by applying a chemical etchant to the edge surface (7) in a targeted manner by means of an etchant jet (11). In the case of a predetermined jet cross-section (12), the etchant jet (11) is guided tangentially in alignment with the edge surface (7) such that the etchant jet (11) hits the edge surface (7) only with a portion of its jet cross-section (12). The invention further relates to a device (20, 30) for producing an edge structure of a semiconductor component.
本发明涉及一种用于制造半导体器件的边缘结构的方法，其具有步骤：提供半导体本体（1），所述半导体本体（1）具有至少两个彼此间隔开的主面（3，4），所述主面（3，4）分别具有边缘（5，6），边缘面（7）在所述边缘（5</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | METHOD AND APPARATUS FOR MANUFACTURING EDGE STRUCTURE OF SEMICONDUCTOR DEVICE |
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