Semiconductor defect detection device and method based on infrared microscopic digital holography

The invention discloses a semiconductor defect detection device and method based on infrared microscopic digital holography. A light beam emitted by an infrared semiconductor laser is modulated by a polaroid and then is divided into two beams; the first laser beam becomes parallel light which serves as a reference light beam after being reflected; the second laser beam becomes parallel light, irradiates and penetrates through the semiconductor to be measured, and the light beam modulated by the lens amplification system becomes an object light beam; the object light beam and the reference light beam form an infrared holographic interference pattern on the beam splitter, and the infrared holographic interference pattern is received and recorded by the image acquisition device and then transmitted to the computer to record a hologram containing phase information of the semiconductor to be measured; and carrying out image processing on the non-defective and defective semiconductor holograms, reconstructing a pha