Light emitting diodes integrated with aluminum-containing layers and related methods

Light emitting diodes integrated with aluminum-containing layers and related methods

A light emitting diode (LED) structure includes an active region having at least one aluminum-containing quantum well (QW) stack that emits light from the LED structure when activated. The LED structure exhibits an improved internal quantum efficiency value that is higher than the internal quantum e...

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Hauptverfasser: ZHANG YINGLAN, LIANG BENJAMIN, HE GANG, SCHNEIDER RICHARD PETER, HUT HILA, CAI MIAOSHAN
Format: Patent
Sprache:chi ; eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator ZHANG YINGLAN
LIANG BENJAMIN
HE GANG
SCHNEIDER RICHARD PETER
HUT HILA
CAI MIAOSHAN
description A light emitting diode (LED) structure includes an active region having at least one aluminum-containing quantum well (QW) stack that emits light from the LED structure when activated. The LED structure exhibits an improved internal quantum efficiency value that is higher than the internal quantum efficiency value of an LED structure that does not include aluminum within the QW stack. The LED structure also exhibits an improved peak wavelength that is longer than an unimproved peak wavelength of an unimproved LED structure. 一种发光二极管(LED)结构，包括有源区，该有源区具有至少一个含铝量子阱(QW)堆叠，该至少一个含铝量子阱(QW)堆叠在被激活时从该LED结构发射光。该LED结构显示出改良的内部量子效率值，该改良的内部量子效率值高于在QW堆叠内不包括铝的LED结构的内部量子效率值。该LED结构还显示出改良的峰值波长，该改良的峰值波长比未改良的LED结构的未改良的峰值波长长。
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ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Light emitting diodes integrated with aluminum-containing layers and related methods
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