CMOS structure and forming method thereof

The technical scheme of the invention provides a CMOS (Complementary Metal Oxide Semiconductor) structure and a forming method thereof, and the forming method comprises the steps: providing a semiconductor substrate, and forming PMOS (P-channel Metal Oxide Semiconductor) channel layers which are alt...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WANG HONGYAN, TANG HANJIE
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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