Wafer jig structure and processing equipment causing high-temperature latent deformation
The invention provides a wafer jig structure and processing equipment for causing high-temperature latent deformation. The wafer jig structure mainly comprises two separable jigs. The first jig is provided with a first inclined plane, and the second jig is provided with another second inclined plane...
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| creator | QIU JINZHEN WENG JINGHONG LYU JIANXING |
| description | The invention provides a wafer jig structure and processing equipment for causing high-temperature latent deformation. The wafer jig structure mainly comprises two separable jigs. The first jig is provided with a first inclined plane, and the second jig is provided with another second inclined plane. And the first inclined surface and the second inclined surface are parallel to each other and are inclined to an external force applying direction simultaneously. When the first jig and the second jig abut against each other and the wafer is clamped between the first inclined surface and the second inclined surface, the chip is subjected to a shear stress component along the surface of the chip by applying external force. If an external force is operated at a high temperature, the wafer will have a high-temperature latent change. According to the inclined structure of the wafer jig and the auxiliary processing equipment, the wafer can be easily activated and high-temperature latent deformation can be developed by |
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The wafer jig structure mainly comprises two separable jigs. The first jig is provided with a first inclined plane, and the second jig is provided with another second inclined plane. And the first inclined surface and the second inclined surface are parallel to each other and are inclined to an external force applying direction simultaneously. When the first jig and the second jig abut against each other and the wafer is clamped between the first inclined surface and the second inclined surface, the chip is subjected to a shear stress component along the surface of the chip by applying external force. If an external force is operated at a high temperature, the wafer will have a high-temperature latent change. 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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Wafer jig structure and processing equipment causing high-temperature latent deformation |
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