Method for depositing silicon nitride layer on surface of carbon material through oxidation and vapor reaction

The invention discloses a method for oxidizing on the surface of a carbon material and depositing a silicon nitride layer through vapor reaction, and relates to a method for vapor reaction deposition on the surface of the carbon material. The method aims at solving the problem that a high-temperatur...

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1. Verfasser: LYU TIEZHENG
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention discloses a method for oxidizing on the surface of a carbon material and depositing a silicon nitride layer through vapor reaction, and relates to a method for vapor reaction deposition on the surface of the carbon material. The method aims at solving the problem that a high-temperature-resistant infrared heat reflecting material is difficult to prepare on the surface of an existing carbon-carbon composite material. The method comprises the following steps: putting a carbon material into a heat treatment furnace, and spreading silicon monoxide powder or blocks around a surface to be deposited; introducing nitrogen into the heat treatment furnace, raising the temperature of the heat treatment furnace to 1350-1500 DEG C under the nitrogen atmosphere, keeping the temperature for 2-5 hours, and then cooling to room temperature to obtain a white substance layer on the to-be-deposited surface of the carbon material; the flocculent silicon nitride nanowires on the surface layer of the white substance l