Intensively packaged VCSEL array, semiconductor device including VCSEL array, and method of manufacturing same

Intensively packaged VCSEL array, semiconductor device including VCSEL array, and method of manufacturing same

The present disclosure relates to the field of vertical cavity surface emitting lasers (VCSELs), and in particular to a semiconductor device (1) comprising a vertical cavity surface emitting laser (VCSEL) array and a method for manufacturing a semiconductor device comprising a vertical cavity surfac...

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Hauptverfasser: WEIGL ALEXANDER, PRUIJMBOOM, ARMAND
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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creator WEIGL ALEXANDER
PRUIJMBOOM, ARMAND
description The present disclosure relates to the field of vertical cavity surface emitting lasers (VCSELs), and in particular to a semiconductor device (1) comprising a vertical cavity surface emitting laser (VCSEL) array and a method for manufacturing a semiconductor device comprising a vertical cavity surface emitting laser (VCSEL) array, the semiconductor device includes: a first VCSEL having a first active region; a second VCSEL having a second active region; the bridge is connected with the first VCSEL and the second VCSEL; wherein a first active region of the first VCSEL and a second active region of the second VCSEL are arranged along a first crystal axis; the blocking structure is arranged between the first VCSEL and the second VCSEL, and the blocking structure is suitable for blocking defects from being propagated between the first VCSEL and the second VCSEL along the first crystal axis. 本披露内容涉及垂直腔表面发射激光器(VCSEL)领域，并且特别地涉及一种包括垂直腔表面发射激光器VCSEL阵列的半导体器件(1)以及一种用于制造包括垂直腔表面发射激光器VCSEL阵列的半导体器件的方法，其中，所述半导体器件包括：具有第一有源区域的第一
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN115377800A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN115377800A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN115377800A3</originalsourceid><addsrcrecordid>eNqNzr0KwjAUQOEsDqK-w3VXaCnSrlIqCuKiuJZLcluDyU3JT6Fvr4KLm9NZvuHMBZ84Egc9kplgQPnEnhTc62tzBvQepw0Eslo6VklG50HRqCWBZmmS0tz_WmQFluLDKXAdWOTUoYzJf2BAS0sx69AEWn27EOtDc6uPWxpcS-E9QEyxrS95vivKssqyffGPeQE4IkGe</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Intensively packaged VCSEL array, semiconductor device including VCSEL array, and method of manufacturing same</title><source>esp@cenet</source><creator>WEIGL ALEXANDER ; PRUIJMBOOM, ARMAND</creator><creatorcontrib>WEIGL ALEXANDER ; PRUIJMBOOM, ARMAND</creatorcontrib><description>The present disclosure relates to the field of vertical cavity surface emitting lasers (VCSELs), and in particular to a semiconductor device (1) comprising a vertical cavity surface emitting laser (VCSEL) array and a method for manufacturing a semiconductor device comprising a vertical cavity surface emitting laser (VCSEL) array, the semiconductor device includes: a first VCSEL having a first active region; a second VCSEL having a second active region; the bridge is connected with the first VCSEL and the second VCSEL; wherein a first active region of the first VCSEL and a second active region of the second VCSEL are arranged along a first crystal axis; the blocking structure is arranged between the first VCSEL and the second VCSEL, and the blocking structure is suitable for blocking defects from being propagated between the first VCSEL and the second VCSEL along the first crystal axis. 本披露内容涉及垂直腔表面发射激光器(VCSEL)领域，并且特别地涉及一种包括垂直腔表面发射激光器VCSEL阵列的半导体器件(1)以及一种用于制造包括垂直腔表面发射激光器VCSEL阵列的半导体器件的方法，其中，所述半导体器件包括：具有第一有源区域的第一</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES USING STIMULATED EMISSION ; ELECTRICITY</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20221122&amp;DB=EPODOC&amp;CC=CN&amp;NR=115377800A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20221122&amp;DB=EPODOC&amp;CC=CN&amp;NR=115377800A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WEIGL ALEXANDER</creatorcontrib><creatorcontrib>PRUIJMBOOM, ARMAND</creatorcontrib><title>Intensively packaged VCSEL array, semiconductor device including VCSEL array, and method of manufacturing same</title><description>The present disclosure relates to the field of vertical cavity surface emitting lasers (VCSELs), and in particular to a semiconductor device (1) comprising a vertical cavity surface emitting laser (VCSEL) array and a method for manufacturing a semiconductor device comprising a vertical cavity surface emitting laser (VCSEL) array, the semiconductor device includes: a first VCSEL having a first active region; a second VCSEL having a second active region; the bridge is connected with the first VCSEL and the second VCSEL; wherein a first active region of the first VCSEL and a second active region of the second VCSEL are arranged along a first crystal axis; the blocking structure is arranged between the first VCSEL and the second VCSEL, and the blocking structure is suitable for blocking defects from being propagated between the first VCSEL and the second VCSEL along the first crystal axis. 本披露内容涉及垂直腔表面发射激光器(VCSEL)领域，并且特别地涉及一种包括垂直腔表面发射激光器VCSEL阵列的半导体器件(1)以及一种用于制造包括垂直腔表面发射激光器VCSEL阵列的半导体器件的方法，其中，所述半导体器件包括：具有第一有源区域的第一</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNzr0KwjAUQOEsDqK-w3VXaCnSrlIqCuKiuJZLcluDyU3JT6Fvr4KLm9NZvuHMBZ84Egc9kplgQPnEnhTc62tzBvQepw0Eslo6VklG50HRqCWBZmmS0tz_WmQFluLDKXAdWOTUoYzJf2BAS0sx69AEWn27EOtDc6uPWxpcS-E9QEyxrS95vivKssqyffGPeQE4IkGe</recordid><startdate>20221122</startdate><enddate>20221122</enddate><creator>WEIGL ALEXANDER</creator><creator>PRUIJMBOOM, ARMAND</creator><scope>EVB</scope></search><sort><creationdate>20221122</creationdate><title>Intensively packaged VCSEL array, semiconductor device including VCSEL array, and method of manufacturing same</title><author>WEIGL ALEXANDER ; PRUIJMBOOM, ARMAND</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN115377800A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>WEIGL ALEXANDER</creatorcontrib><creatorcontrib>PRUIJMBOOM, ARMAND</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WEIGL ALEXANDER</au><au>PRUIJMBOOM, ARMAND</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Intensively packaged VCSEL array, semiconductor device including VCSEL array, and method of manufacturing same</title><date>2022-11-22</date><risdate>2022</risdate><abstract>The present disclosure relates to the field of vertical cavity surface emitting lasers (VCSELs), and in particular to a semiconductor device (1) comprising a vertical cavity surface emitting laser (VCSEL) array and a method for manufacturing a semiconductor device comprising a vertical cavity surface emitting laser (VCSEL) array, the semiconductor device includes: a first VCSEL having a first active region; a second VCSEL having a second active region; the bridge is connected with the first VCSEL and the second VCSEL; wherein a first active region of the first VCSEL and a second active region of the second VCSEL are arranged along a first crystal axis; the blocking structure is arranged between the first VCSEL and the second VCSEL, and the blocking structure is suitable for blocking defects from being propagated between the first VCSEL and the second VCSEL along the first crystal axis. 本披露内容涉及垂直腔表面发射激光器(VCSEL)领域，并且特别地涉及一种包括垂直腔表面发射激光器VCSEL阵列的半导体器件(1)以及一种用于制造包括垂直腔表面发射激光器VCSEL阵列的半导体器件的方法，其中，所述半导体器件包括：具有第一有源区域的第一</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
title Intensively packaged VCSEL array, semiconductor device including VCSEL array, and method of manufacturing same
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