Deep trench capacitor and manufacturing method thereof

The invention provides a deep trench capacitor and a manufacturing method thereof, and the method comprises the steps: providing a substrate, and forming a deep trench in the substrate; forming an oxide layer and a polycrystalline silicon layer which are stacked in the deep trench and on the surface...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KONG YURAN, YU HAN, MIAO BINBIN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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