Chip-scale ultrathin optical power meter probe
The invention relates to a chip-level ultrathin optical power meter probe which comprises a shell with an opening in one side, optical glass installed at the opening of the shell and an ultrathin thermoelectric chip arranged in the shell, and a photo-thermal sensitive layer is integrally machined on...
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| creator | LIU YAN HU ZHIYU SHI HUILIE WU ZHENHUA LIN HENGXING ZHANG SHUAI LIU ZEKUN |
| description | The invention relates to a chip-level ultrathin optical power meter probe which comprises a shell with an opening in one side, optical glass installed at the opening of the shell and an ultrathin thermoelectric chip arranged in the shell, and a photo-thermal sensitive layer is integrally machined on the surface of the side, facing the optical glass, of the ultrathin thermoelectric chip. And a constant-temperature substrate is arranged on the surface of the other opposite side. Compared with the prior art, the probe provided by the invention has good stability and reliability, and can realize quantitative measurement of the temperature of the photo-thermal sensitive layer and the like.
本发明涉及一种芯片级超薄光功率计探头，包括一侧开口的外壳、安装在所述外壳开口处的光学玻璃，以及置于所述外壳的超薄热电芯片，所述超薄热电芯片朝向光学玻璃的一侧表面一体加工有光热敏感层，相对另一侧表面则设有恒温基底。与现有技术相比，本发明的探头具有良好的稳定性和可靠性，并可实现对光热敏感层温度的定量测量等。 |
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本发明涉及一种芯片级超薄光功率计探头，包括一侧开口的外壳、安装在所述外壳开口处的光学玻璃，以及置于所述外壳的超薄热电芯片，所述超薄热电芯片朝向光学玻璃的一侧表面一体加工有光热敏感层，相对另一侧表面则设有恒温基底。与现有技术相比，本发明的探头具有良好的稳定性和可靠性，并可实现对光热敏感层温度的定量测量等。</description><language>chi ; eng</language><subject>COLORIMETRY ; MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT ; MEASURING ; MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES ; MICROSTRUCTURAL TECHNOLOGY ; PERFORMING OPERATIONS ; PHYSICS ; RADIATION PYROMETRY ; TESTING ; TRANSPORTING</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221021&DB=EPODOC&CC=CN&NR=115219021A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221021&DB=EPODOC&CC=CN&NR=115219021A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LIU YAN</creatorcontrib><creatorcontrib>HU ZHIYU</creatorcontrib><creatorcontrib>SHI HUILIE</creatorcontrib><creatorcontrib>WU ZHENHUA</creatorcontrib><creatorcontrib>LIN HENGXING</creatorcontrib><creatorcontrib>ZHANG SHUAI</creatorcontrib><creatorcontrib>LIU ZEKUN</creatorcontrib><title>Chip-scale ultrathin optical power meter probe</title><description>The invention relates to a chip-level ultrathin optical power meter probe which comprises a shell with an opening in one side, optical glass installed at the opening of the shell and an ultrathin thermoelectric chip arranged in the shell, and a photo-thermal sensitive layer is integrally machined on the surface of the side, facing the optical glass, of the ultrathin thermoelectric chip. And a constant-temperature substrate is arranged on the surface of the other opposite side. Compared with the prior art, the probe provided by the invention has good stability and reliability, and can realize quantitative measurement of the temperature of the photo-thermal sensitive layer and the like.
本发明涉及一种芯片级超薄光功率计探头，包括一侧开口的外壳、安装在所述外壳开口处的光学玻璃，以及置于所述外壳的超薄热电芯片，所述超薄热电芯片朝向光学玻璃的一侧表面一体加工有光热敏感层，相对另一侧表面则设有恒温基底。与现有技术相比，本发明的探头具有良好的稳定性和可靠性，并可实现对光热敏感层温度的定量测量等。</description><subject>COLORIMETRY</subject><subject>MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT</subject><subject>MEASURING</subject><subject>MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES</subject><subject>MICROSTRUCTURAL TECHNOLOGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PHYSICS</subject><subject>RADIATION PYROMETRY</subject><subject>TESTING</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNBzzsgs0C1OTsxJVSjNKSlKLMnIzFPILyjJBAopFOSXpxYp5KaWAMmCovykVB4G1rTEnOJUXijNzaDo5hri7KGbWpAfn1pckJicmpdaEu_sZ2hoamRoaWBk6GhMjBoA_GAqgw</recordid><startdate>20221021</startdate><enddate>20221021</enddate><creator>LIU YAN</creator><creator>HU ZHIYU</creator><creator>SHI HUILIE</creator><creator>WU ZHENHUA</creator><creator>LIN HENGXING</creator><creator>ZHANG SHUAI</creator><creator>LIU ZEKUN</creator><scope>EVB</scope></search><sort><creationdate>20221021</creationdate><title>Chip-scale ultrathin optical power meter probe</title><author>LIU YAN ; HU ZHIYU ; SHI HUILIE ; WU ZHENHUA ; LIN HENGXING ; ZHANG SHUAI ; LIU ZEKUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN115219021A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>COLORIMETRY</topic><topic>MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT</topic><topic>MEASURING</topic><topic>MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES</topic><topic>MICROSTRUCTURAL TECHNOLOGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PHYSICS</topic><topic>RADIATION PYROMETRY</topic><topic>TESTING</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>LIU YAN</creatorcontrib><creatorcontrib>HU ZHIYU</creatorcontrib><creatorcontrib>SHI HUILIE</creatorcontrib><creatorcontrib>WU ZHENHUA</creatorcontrib><creatorcontrib>LIN HENGXING</creatorcontrib><creatorcontrib>ZHANG SHUAI</creatorcontrib><creatorcontrib>LIU ZEKUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LIU YAN</au><au>HU ZHIYU</au><au>SHI HUILIE</au><au>WU ZHENHUA</au><au>LIN HENGXING</au><au>ZHANG SHUAI</au><au>LIU ZEKUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Chip-scale ultrathin optical power meter probe</title><date>2022-10-21</date><risdate>2022</risdate><abstract>The invention relates to a chip-level ultrathin optical power meter probe which comprises a shell with an opening in one side, optical glass installed at the opening of the shell and an ultrathin thermoelectric chip arranged in the shell, and a photo-thermal sensitive layer is integrally machined on the surface of the side, facing the optical glass, of the ultrathin thermoelectric chip. And a constant-temperature substrate is arranged on the surface of the other opposite side. Compared with the prior art, the probe provided by the invention has good stability and reliability, and can realize quantitative measurement of the temperature of the photo-thermal sensitive layer and the like.
本发明涉及一种芯片级超薄光功率计探头，包括一侧开口的外壳、安装在所述外壳开口处的光学玻璃，以及置于所述外壳的超薄热电芯片，所述超薄热电芯片朝向光学玻璃的一侧表面一体加工有光热敏感层，相对另一侧表面则设有恒温基底。与现有技术相比，本发明的探头具有良好的稳定性和可靠性，并可实现对光热敏感层温度的定量测量等。</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | COLORIMETRY MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASURING MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PHYSICS RADIATION PYROMETRY TESTING TRANSPORTING |
| title | Chip-scale ultrathin optical power meter probe |
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