Substrate processing method

The present invention relates to a substrate processing method, and more particularly, to a substrate processing method capable of preventing a decrease in thin film characteristics by adjusting the temperature inside a chamber when processing a substrate. A substrate processing method includes: a step of increasing a process pressure from a first pressure P1 to a second pressure P2 greater than atmospheric pressure; a step of reducing the process pressure from a sixth pressure P6, which is greater than atmospheric pressure, to a seventh pressure P7; an annealing step of changing the process pressure in a preset pressure change mode between the pressurizing step and the depressurizing step in a temperature environment of a second temperature T2 higher than normal temperature; wherein the temperature rise step is executed during the execution of the pressurization step or after the execution of the pressurization step, and the temperature rise step is to raise the temperature environment from the first tempera