Preparation method of (100)/(111) oriented composite high-performance diamond semiconductor
The invention discloses a preparation method of a (100)/(111) oriented composite high-performance diamond semiconductor, and belongs to the field of diamond semiconductor materials. The process comprises the following steps: a, screening (100) diamond seed crystals with dislocation density greater t...
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| creator | LIU JINLONG ZHAO SHANGMAN WEI JUNJUN ZHENG YUTING LI CHENGMING WANG PENG MOU LIANXI CHAN SIYI CHEN LIANGXIAN OUYANG XIAOPING |
| description | The invention discloses a preparation method of a (100)/(111) oriented composite high-performance diamond semiconductor, and belongs to the field of diamond semiconductor materials. The process comprises the following steps: a, screening (100) diamond seed crystals with dislocation density greater than 106/cm < 2 >; b, performing plasma etching to enable dislocation to be exposed; c, realizing the formation of high-density polycrystal points through growth process control; d, precisely polishing the surface to form a (100) and (111) oriented composite diamond material; and e, realizing differentiated conduction of (100) and (111) orientations through doping epitaxial growth or hydrotreating, and forming a diamond semiconductor with comprehensively improved carrier mobility and carrier density. According to the method, the dislocation defect of the (100) monocrystal diamond substrate is utilized, and the microwave plasma chemical vapor deposition technology growth process is regulated and controlled, so that t |
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The process comprises the following steps: a, screening (100) diamond seed crystals with dislocation density greater than 106/cm < 2 >; b, performing plasma etching to enable dislocation to be exposed; c, realizing the formation of high-density polycrystal points through growth process control; d, precisely polishing the surface to form a (100) and (111) oriented composite diamond material; and e, realizing differentiated conduction of (100) and (111) orientations through doping epitaxial growth or hydrotreating, and forming a diamond semiconductor with comprehensively improved carrier mobility and carrier density. 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The process comprises the following steps: a, screening (100) diamond seed crystals with dislocation density greater than 106/cm < 2 >; b, performing plasma etching to enable dislocation to be exposed; c, realizing the formation of high-density polycrystal points through growth process control; d, precisely polishing the surface to form a (100) and (111) oriented composite diamond material; and e, realizing differentiated conduction of (100) and (111) orientations through doping epitaxial growth or hydrotreating, and forming a diamond semiconductor with comprehensively improved carrier mobility and carrier density. According to the method, the dislocation defect of the (100) monocrystal diamond substrate is utilized, and the microwave plasma chemical vapor deposition technology growth process is regulated and controlled, so that t</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Preparation method of (100)/(111) oriented composite high-performance diamond semiconductor |
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