Semiconductor device

The invention provides a transistor capable of compensating drain/source capacitance and improving frequency characteristics, and a semiconductor device equipped with the transistor. The semiconductor device includes: a gate wiring extending in a first direction and to which an input signal is transmitted; a transistor including a plurality of gate electrodes connected to the gate wiring at intervals and extending in a second direction orthogonal to the first direction, and a source region and a drain region provided in the first direction across each of the plurality of gate electrodes; drain wires disposed on each of the drain regions and connected to the drain regions; an output wiring connected to the drain wiring and through which an output signal output from the drain region is transferred; and a stub line connected to a side of at least one of the drain wirings opposite to the gate wiring. 本公开提供能补偿漏极/源极间电容从而提高频率特性的晶体管以及搭载有该晶体管的半导体装置。半导体装置具备：栅极布线，在第一方向延伸并被传递输入信号；晶体管，包括多个栅电极以及源极区域和漏极区域，所述多个栅电极隔开间隔地连接于所述栅