Electrostatic chuck and semiconductor manufacturing apparatus

An electrostatic chuck provided with a ceramic dielectric substrate and a base plate, the electrostatic chuck being characterized in that the ceramic dielectric substrate has: first and second main surfaces; a groove portion recessed from the first main surface to the second main surface; and a plur...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HAYAKAWA TATSUYA, UEFUJI JUMPEI, ONO EITO, UMETSU TOMOKI
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator HAYAKAWA TATSUYA
UEFUJI JUMPEI
ONO EITO
UMETSU TOMOKI
description An electrostatic chuck provided with a ceramic dielectric substrate and a base plate, the electrostatic chuck being characterized in that the ceramic dielectric substrate has: first and second main surfaces; a groove portion recessed from the first main surface to the second main surface; and a plurality of cooling gas holes penetrating between the groove portion and the second main surface, the groove portion having first and second circumferential grooves and first and second radial grooves, the plurality of cooling gas holes having: a first hole overlapping the first radial groove in plan view; and a second hole that overlaps the second radial groove in plan view, the base plate having a gas introduction path that supplies a cooling gas to the first hole and the second hole, the first circumferential groove having a first end located on one end side in the circumferential direction and a second end located on the other end side, and the second circumferential groove having a third end located on one end si
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN115132635A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN115132635A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN115132635A3</originalsourceid><addsrcrecordid>eNqNyjEOwjAMAMAsDKjwh_AAhhCVjQFVRZ2Y2CvLdSFq60Sx_X8WHsB0y-3drV8JtWZR0IQeP4aLB5680JYw82SoufoN2GZAtZr47aEUqKAmB7ebYRU6_mzc6dG_uuFMJY8kBZCYdOyeIbQhXq6xvcd_zheJKjEV</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Electrostatic chuck and semiconductor manufacturing apparatus</title><source>esp@cenet</source><creator>HAYAKAWA TATSUYA ; UEFUJI JUMPEI ; ONO EITO ; UMETSU TOMOKI</creator><creatorcontrib>HAYAKAWA TATSUYA ; UEFUJI JUMPEI ; ONO EITO ; UMETSU TOMOKI</creatorcontrib><description>An electrostatic chuck provided with a ceramic dielectric substrate and a base plate, the electrostatic chuck being characterized in that the ceramic dielectric substrate has: first and second main surfaces; a groove portion recessed from the first main surface to the second main surface; and a plurality of cooling gas holes penetrating between the groove portion and the second main surface, the groove portion having first and second circumferential grooves and first and second radial grooves, the plurality of cooling gas holes having: a first hole overlapping the first radial groove in plan view; and a second hole that overlaps the second radial groove in plan view, the base plate having a gas introduction path that supplies a cooling gas to the first hole and the second hole, the first circumferential groove having a first end located on one end side in the circumferential direction and a second end located on the other end side, and the second circumferential groove having a third end located on one end si</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220930&amp;DB=EPODOC&amp;CC=CN&amp;NR=115132635A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220930&amp;DB=EPODOC&amp;CC=CN&amp;NR=115132635A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HAYAKAWA TATSUYA</creatorcontrib><creatorcontrib>UEFUJI JUMPEI</creatorcontrib><creatorcontrib>ONO EITO</creatorcontrib><creatorcontrib>UMETSU TOMOKI</creatorcontrib><title>Electrostatic chuck and semiconductor manufacturing apparatus</title><description>An electrostatic chuck provided with a ceramic dielectric substrate and a base plate, the electrostatic chuck being characterized in that the ceramic dielectric substrate has: first and second main surfaces; a groove portion recessed from the first main surface to the second main surface; and a plurality of cooling gas holes penetrating between the groove portion and the second main surface, the groove portion having first and second circumferential grooves and first and second radial grooves, the plurality of cooling gas holes having: a first hole overlapping the first radial groove in plan view; and a second hole that overlaps the second radial groove in plan view, the base plate having a gas introduction path that supplies a cooling gas to the first hole and the second hole, the first circumferential groove having a first end located on one end side in the circumferential direction and a second end located on the other end side, and the second circumferential groove having a third end located on one end si</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyjEOwjAMAMAsDKjwh_AAhhCVjQFVRZ2Y2CvLdSFq60Sx_X8WHsB0y-3drV8JtWZR0IQeP4aLB5680JYw82SoufoN2GZAtZr47aEUqKAmB7ebYRU6_mzc6dG_uuFMJY8kBZCYdOyeIbQhXq6xvcd_zheJKjEV</recordid><startdate>20220930</startdate><enddate>20220930</enddate><creator>HAYAKAWA TATSUYA</creator><creator>UEFUJI JUMPEI</creator><creator>ONO EITO</creator><creator>UMETSU TOMOKI</creator><scope>EVB</scope></search><sort><creationdate>20220930</creationdate><title>Electrostatic chuck and semiconductor manufacturing apparatus</title><author>HAYAKAWA TATSUYA ; UEFUJI JUMPEI ; ONO EITO ; UMETSU TOMOKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN115132635A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HAYAKAWA TATSUYA</creatorcontrib><creatorcontrib>UEFUJI JUMPEI</creatorcontrib><creatorcontrib>ONO EITO</creatorcontrib><creatorcontrib>UMETSU TOMOKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HAYAKAWA TATSUYA</au><au>UEFUJI JUMPEI</au><au>ONO EITO</au><au>UMETSU TOMOKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Electrostatic chuck and semiconductor manufacturing apparatus</title><date>2022-09-30</date><risdate>2022</risdate><abstract>An electrostatic chuck provided with a ceramic dielectric substrate and a base plate, the electrostatic chuck being characterized in that the ceramic dielectric substrate has: first and second main surfaces; a groove portion recessed from the first main surface to the second main surface; and a plurality of cooling gas holes penetrating between the groove portion and the second main surface, the groove portion having first and second circumferential grooves and first and second radial grooves, the plurality of cooling gas holes having: a first hole overlapping the first radial groove in plan view; and a second hole that overlaps the second radial groove in plan view, the base plate having a gas introduction path that supplies a cooling gas to the first hole and the second hole, the first circumferential groove having a first end located on one end side in the circumferential direction and a second end located on the other end side, and the second circumferential groove having a third end located on one end si</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language chi ; eng
recordid cdi_epo_espacenet_CN115132635A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Electrostatic chuck and semiconductor manufacturing apparatus
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T05%3A59%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HAYAKAWA%20TATSUYA&rft.date=2022-09-30&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN115132635A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true