Polypyrrole (at) graphene/semiconductor heterostructure and preparation method and application thereof
The invention relates to a polypyrrole (at) graphene/semiconductor heterostructure and a preparation method and application thereof. The preparation method comprises the following steps: step 1, preparing a polypyrrole (at) graphene composite structure; and step 2, preparing the polypyrrole (at) gra...
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| creator | LI BINGSHENG LIU YICHUN WANG YUEFEI SONG RENJING |
| description | The invention relates to a polypyrrole (at) graphene/semiconductor heterostructure and a preparation method and application thereof. The preparation method comprises the following steps: step 1, preparing a polypyrrole (at) graphene composite structure; and step 2, preparing the polypyrrole (at) graphene/semiconductor heterostructure. Compared with pure polypyrrole, the prepared polypyrrole and graphene coated structure has the advantages that the performance is greatly improved, the carrier concentration and the carrier mobility value are obviously improved, and the performance of a device can be obviously improved by forming a heterostructure with other semiconductors.
本发明涉及一种聚吡咯@石墨烯/半导体异质结构及其制备方法和应用，包括以下步骤：步骤1、聚吡咯@石墨烯复合结构的制备；步骤2、聚吡咯@石墨烯/半导体异质结构的制备。本发明制备的聚吡咯@石墨烯包覆结构相比单纯聚吡咯有很大的性能提升，其载流子浓度和载流子迁移率数值有明显提高，和其他半导体形成异质结构，可以明显改善器件性能。 |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN115101680A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN115101680A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN115101680A3</originalsourceid><addsrcrecordid>eNqNjTEKwkAQRdNYiHqHtdNCzCKKrQTFSizsw7CZZBc2O8PspMjtDeoBrB7_8eHNi_ZJceRRhCKaDejWdALsMeE-Yx8cpWZwSmI8KgpllWkOggZSY1iQQUADJdOjemo-GphjcF-tHgWpXRazFmLG1Y-LYn27vqr7DplqzAxuKmpdPaw92tKezuXl8M_nDRDyQK8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Polypyrrole (at) graphene/semiconductor heterostructure and preparation method and application thereof</title><source>esp@cenet</source><creator>LI BINGSHENG ; LIU YICHUN ; WANG YUEFEI ; SONG RENJING</creator><creatorcontrib>LI BINGSHENG ; LIU YICHUN ; WANG YUEFEI ; SONG RENJING</creatorcontrib><description>The invention relates to a polypyrrole (at) graphene/semiconductor heterostructure and a preparation method and application thereof. The preparation method comprises the following steps: step 1, preparing a polypyrrole (at) graphene composite structure; and step 2, preparing the polypyrrole (at) graphene/semiconductor heterostructure. Compared with pure polypyrrole, the prepared polypyrrole and graphene coated structure has the advantages that the performance is greatly improved, the carrier concentration and the carrier mobility value are obviously improved, and the performance of a device can be obviously improved by forming a heterostructure with other semiconductors.
本发明涉及一种聚吡咯@石墨烯/半导体异质结构及其制备方法和应用，包括以下步骤：步骤1、聚吡咯@石墨烯复合结构的制备；步骤2、聚吡咯@石墨烯/半导体异质结构的制备。本发明制备的聚吡咯@石墨烯包覆结构相比单纯聚吡咯有很大的性能提升，其载流子浓度和载流子迁移率数值有明显提高，和其他半导体形成异质结构，可以明显改善器件性能。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220923&DB=EPODOC&CC=CN&NR=115101680A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220923&DB=EPODOC&CC=CN&NR=115101680A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LI BINGSHENG</creatorcontrib><creatorcontrib>LIU YICHUN</creatorcontrib><creatorcontrib>WANG YUEFEI</creatorcontrib><creatorcontrib>SONG RENJING</creatorcontrib><title>Polypyrrole (at) graphene/semiconductor heterostructure and preparation method and application thereof</title><description>The invention relates to a polypyrrole (at) graphene/semiconductor heterostructure and a preparation method and application thereof. The preparation method comprises the following steps: step 1, preparing a polypyrrole (at) graphene composite structure; and step 2, preparing the polypyrrole (at) graphene/semiconductor heterostructure. Compared with pure polypyrrole, the prepared polypyrrole and graphene coated structure has the advantages that the performance is greatly improved, the carrier concentration and the carrier mobility value are obviously improved, and the performance of a device can be obviously improved by forming a heterostructure with other semiconductors.
本发明涉及一种聚吡咯@石墨烯/半导体异质结构及其制备方法和应用，包括以下步骤：步骤1、聚吡咯@石墨烯复合结构的制备；步骤2、聚吡咯@石墨烯/半导体异质结构的制备。本发明制备的聚吡咯@石墨烯包覆结构相比单纯聚吡咯有很大的性能提升，其载流子浓度和载流子迁移率数值有明显提高，和其他半导体形成异质结构，可以明显改善器件性能。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjTEKwkAQRdNYiHqHtdNCzCKKrQTFSizsw7CZZBc2O8PspMjtDeoBrB7_8eHNi_ZJceRRhCKaDejWdALsMeE-Yx8cpWZwSmI8KgpllWkOggZSY1iQQUADJdOjemo-GphjcF-tHgWpXRazFmLG1Y-LYn27vqr7DplqzAxuKmpdPaw92tKezuXl8M_nDRDyQK8</recordid><startdate>20220923</startdate><enddate>20220923</enddate><creator>LI BINGSHENG</creator><creator>LIU YICHUN</creator><creator>WANG YUEFEI</creator><creator>SONG RENJING</creator><scope>EVB</scope></search><sort><creationdate>20220923</creationdate><title>Polypyrrole (at) graphene/semiconductor heterostructure and preparation method and application thereof</title><author>LI BINGSHENG ; LIU YICHUN ; WANG YUEFEI ; SONG RENJING</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN115101680A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LI BINGSHENG</creatorcontrib><creatorcontrib>LIU YICHUN</creatorcontrib><creatorcontrib>WANG YUEFEI</creatorcontrib><creatorcontrib>SONG RENJING</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LI BINGSHENG</au><au>LIU YICHUN</au><au>WANG YUEFEI</au><au>SONG RENJING</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Polypyrrole (at) graphene/semiconductor heterostructure and preparation method and application thereof</title><date>2022-09-23</date><risdate>2022</risdate><abstract>The invention relates to a polypyrrole (at) graphene/semiconductor heterostructure and a preparation method and application thereof. The preparation method comprises the following steps: step 1, preparing a polypyrrole (at) graphene composite structure; and step 2, preparing the polypyrrole (at) graphene/semiconductor heterostructure. Compared with pure polypyrrole, the prepared polypyrrole and graphene coated structure has the advantages that the performance is greatly improved, the carrier concentration and the carrier mobility value are obviously improved, and the performance of a device can be obviously improved by forming a heterostructure with other semiconductors.
本发明涉及一种聚吡咯@石墨烯/半导体异质结构及其制备方法和应用，包括以下步骤：步骤1、聚吡咯@石墨烯复合结构的制备；步骤2、聚吡咯@石墨烯/半导体异质结构的制备。本发明制备的聚吡咯@石墨烯包覆结构相比单纯聚吡咯有很大的性能提升，其载流子浓度和载流子迁移率数值有明显提高，和其他半导体形成异质结构，可以明显改善器件性能。</abstract><oa>free_for_read</oa></addata></record> |
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| title | Polypyrrole (at) graphene/semiconductor heterostructure and preparation method and application thereof |
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