Preparation method of multi-layer composite ITO (Indium Tin Oxide) film
The invention relates to a preparation method of a multi-layer composite ITO (Indium Tin Oxide) film, which comprises an ITO layer sputtered on a substrate by a magnetron sputtering mode in a cavity pressure environment of 1Pa-2Pa by taking argon as a working gas, the M layer is sputtered on the ITO...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to a preparation method of a multi-layer composite ITO (Indium Tin Oxide) film, which comprises an ITO layer sputtered on a substrate by a magnetron sputtering mode in a cavity pressure environment of 1Pa-2Pa by taking argon as a working gas, the M layer is sputtered on the ITO layer in a magnetron sputtering mode in the cavity pressure environment, and the M layer is an In-containing layer with the In content larger than or equal to the In content in In2O3; and sputtering the other ITO layer on the M layer in the cavity pressure environment in a magnetron sputtering manner, and the sputtering of the two ITO layers and the M layer satisfies that the thickness of the M layer is 8-16 nm and the total thickness of the M layer and the two ITO layers is 200-600 nm, so that the sheet resistance of the multi-layer composite ITO film is reduced while the light transmission of the multi-layer composite ITO film is ensured.
一种多层复合ITO薄膜的制备方法,所述多层复合ITO薄膜包括以氩气为工作气体,在1Pa~2Pa的腔压环境,通过磁控溅射方式在一基片上溅射的一层ITO |
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