Capacitive sensor and input device

Capacitive sensor and input device

The electrostatic capacitance-type sensor, which gives consideration to processability and environmental resistance and can provide invisibility, has a structure in which a first transparent electrode part (4) and a second transparent electrode part (5), each of which is composed of crystalline ITO,...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: YAMAMURA KEN, TAKAHASHI SOTA, YAZAWA MANABU
Format: Patent
Sprache:chi ; eng
Schlagworte:
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
PHYSICS
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator YAMAMURA KEN
TAKAHASHI SOTA
YAZAWA MANABU
description The electrostatic capacitance-type sensor, which gives consideration to processability and environmental resistance and can provide invisibility, has a structure in which a first transparent electrode part (4) and a second transparent electrode part (5), each of which is composed of crystalline ITO, are patterned and provided on a base material (2), and the first transparent electrode part (4) and the second transparent electrode part (5) are formed on the base material (2). A bridge wiring section (10) comprising amorphous IZO is provided on adjacent first transparent electrode sections (4) and connecting sections (7) continuous thereto with an insulating layer (20) therebetween, two adjacent second transparent electrode sections (5) are electrically connected by the bridge wiring section (10), and when the thickness of the second transparent electrode sections (5) is TE and the thickness of the bridge wiring section (10) is TB, the thickness of the second transparent electrode sections (5) is TE and the thi
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN115066670A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN115066670A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN115066670A3</originalsourceid><addsrcrecordid>eNrjZFByTixITM4sySxLVShOzSvOL1JIzEtRyMwrKC1RSEkty0xO5WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcVA7al5qSXxzn6GhqYGZmZm5gaOxsSoAQCpDCXv</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Capacitive sensor and input device</title><source>esp@cenet</source><creator>YAMAMURA KEN ; TAKAHASHI SOTA ; YAZAWA MANABU</creator><creatorcontrib>YAMAMURA KEN ; TAKAHASHI SOTA ; YAZAWA MANABU</creatorcontrib><description>The electrostatic capacitance-type sensor, which gives consideration to processability and environmental resistance and can provide invisibility, has a structure in which a first transparent electrode part (4) and a second transparent electrode part (5), each of which is composed of crystalline ITO, are patterned and provided on a base material (2), and the first transparent electrode part (4) and the second transparent electrode part (5) are formed on the base material (2). A bridge wiring section (10) comprising amorphous IZO is provided on adjacent first transparent electrode sections (4) and connecting sections (7) continuous thereto with an insulating layer (20) therebetween, two adjacent second transparent electrode sections (5) are electrically connected by the bridge wiring section (10), and when the thickness of the second transparent electrode sections (5) is TE and the thickness of the bridge wiring section (10) is TB, the thickness of the second transparent electrode sections (5) is TE and the thi</description><language>chi ; eng</language><subject>CALCULATING ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; PHYSICS</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220916&amp;DB=EPODOC&amp;CC=CN&amp;NR=115066670A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220916&amp;DB=EPODOC&amp;CC=CN&amp;NR=115066670A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YAMAMURA KEN</creatorcontrib><creatorcontrib>TAKAHASHI SOTA</creatorcontrib><creatorcontrib>YAZAWA MANABU</creatorcontrib><title>Capacitive sensor and input device</title><description>The electrostatic capacitance-type sensor, which gives consideration to processability and environmental resistance and can provide invisibility, has a structure in which a first transparent electrode part (4) and a second transparent electrode part (5), each of which is composed of crystalline ITO, are patterned and provided on a base material (2), and the first transparent electrode part (4) and the second transparent electrode part (5) are formed on the base material (2). A bridge wiring section (10) comprising amorphous IZO is provided on adjacent first transparent electrode sections (4) and connecting sections (7) continuous thereto with an insulating layer (20) therebetween, two adjacent second transparent electrode sections (5) are electrically connected by the bridge wiring section (10), and when the thickness of the second transparent electrode sections (5) is TE and the thickness of the bridge wiring section (10) is TB, the thickness of the second transparent electrode sections (5) is TE and the thi</description><subject>CALCULATING</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFByTixITM4sySxLVShOzSvOL1JIzEtRyMwrKC1RSEkty0xO5WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcVA7al5qSXxzn6GhqYGZmZm5gaOxsSoAQCpDCXv</recordid><startdate>20220916</startdate><enddate>20220916</enddate><creator>YAMAMURA KEN</creator><creator>TAKAHASHI SOTA</creator><creator>YAZAWA MANABU</creator><scope>EVB</scope></search><sort><creationdate>20220916</creationdate><title>Capacitive sensor and input device</title><author>YAMAMURA KEN ; TAKAHASHI SOTA ; YAZAWA MANABU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN115066670A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>CALCULATING</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>YAMAMURA KEN</creatorcontrib><creatorcontrib>TAKAHASHI SOTA</creatorcontrib><creatorcontrib>YAZAWA MANABU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YAMAMURA KEN</au><au>TAKAHASHI SOTA</au><au>YAZAWA MANABU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Capacitive sensor and input device</title><date>2022-09-16</date><risdate>2022</risdate><abstract>The electrostatic capacitance-type sensor, which gives consideration to processability and environmental resistance and can provide invisibility, has a structure in which a first transparent electrode part (4) and a second transparent electrode part (5), each of which is composed of crystalline ITO, are patterned and provided on a base material (2), and the first transparent electrode part (4) and the second transparent electrode part (5) are formed on the base material (2). A bridge wiring section (10) comprising amorphous IZO is provided on adjacent first transparent electrode sections (4) and connecting sections (7) continuous thereto with an insulating layer (20) therebetween, two adjacent second transparent electrode sections (5) are electrically connected by the bridge wiring section (10), and when the thickness of the second transparent electrode sections (5) is TE and the thickness of the bridge wiring section (10) is TB, the thickness of the second transparent electrode sections (5) is TE and the thi</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language chi ; eng
recordid cdi_epo_espacenet_CN115066670A
source esp@cenet
subjects CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
PHYSICS
title Capacitive sensor and input device
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T23%3A36%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YAMAMURA%20KEN&rft.date=2022-09-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN115066670A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true