SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

The invention provides a substrate processing apparatus and a substrate processing method. A substrate processing apparatus is provided with a substrate holding unit, a nozzle (8), a first supply pipe (114), a first opening/closing unit (111), a first flow rate adjusting unit (112), a second supply...

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Bibliographische Detailangaben
Hauptverfasser:	HIGASHI KATSUEI, TAMURA REO, NAGAO HIROKI, TAKEMOTO KENJI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The invention provides a substrate processing apparatus and a substrate processing method. A substrate processing apparatus is provided with a substrate holding unit, a nozzle (8), a first supply pipe (114), a first opening/closing unit (111), a first flow rate adjusting unit (112), a second supply pipe (124), and a flow rate control unit (200). The second supply pipe supplies the processing liquid to the nozzle. The flow rate control unit controls the first opening/closing unit and the first flow rate adjustment unit. The flow rate control unit performs feedback control on the opening degree of the first flow rate adjustment unit in a state in which the first supply pipe is opened during a first period, and determines the opening degree of the first flow rate adjustment unit to be a first opening degree. The flow rate control unit opens and closes the first supply pipe without feedback control of the opening degree of the first flow rate adjustment unit in a state where the opening degree of the first flow r