Method for preventing colloid residue on surface of silicon carbide epitaxial wafer in grinding and polishing process

The invention provides a method for preventing colloid residue on the surface of a silicon carbide epitaxial wafer in a grinding and polishing process. The method comprises the following steps: (1) preparing the silicon carbide epitaxial wafer; (2) cleaning the silicon carbide epitaxial wafer; (3) c...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LI XIGUANG, ZHOU ZECHENG, LIU WEI, DING XIONGJIE, HAN JINGRUI, ZOU XIONGHUI, QIU SHUJIE
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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