Method for preventing colloid residue on surface of silicon carbide epitaxial wafer in grinding and polishing process
The invention provides a method for preventing colloid residue on the surface of a silicon carbide epitaxial wafer in a grinding and polishing process. The method comprises the following steps: (1) preparing the silicon carbide epitaxial wafer; (2) cleaning the silicon carbide epitaxial wafer; (3) c...
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| creator | LI XIGUANG ZHOU ZECHENG LIU WEI DING XIONGJIE HAN JINGRUI ZOU XIONGHUI QIU SHUJIE |
| description | The invention provides a method for preventing colloid residue on the surface of a silicon carbide epitaxial wafer in a grinding and polishing process. The method comprises the following steps: (1) preparing the silicon carbide epitaxial wafer; (2) cleaning the silicon carbide epitaxial wafer; (3) coating a layer of polymer solution on the Si surface of the silicon carbide epitaxial wafer, and volatilizing the solvent so as to form a polymer film on the Si surface of the silicon carbide epitaxial wafer; (4) adhering the protective adhesive film to the polymer film; (5) carrying out grinding and polishing process treatment on the C surface of the silicon carbide epitaxial wafer; (6) removing the protective adhesive film; (7) cleaning the polishing solution; and (8) removing the polymer film. According to the method for preventing colloid residue on the surface of the silicon carbide epitaxial wafer in the grinding and polishing process, a layer of polymer film is deposited on the Si surface before the protecti |
| format | Patent |
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The method comprises the following steps: (1) preparing the silicon carbide epitaxial wafer; (2) cleaning the silicon carbide epitaxial wafer; (3) coating a layer of polymer solution on the Si surface of the silicon carbide epitaxial wafer, and volatilizing the solvent so as to form a polymer film on the Si surface of the silicon carbide epitaxial wafer; (4) adhering the protective adhesive film to the polymer film; (5) carrying out grinding and polishing process treatment on the C surface of the silicon carbide epitaxial wafer; (6) removing the protective adhesive film; (7) cleaning the polishing solution; and (8) removing the polymer film. 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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Method for preventing colloid residue on surface of silicon carbide epitaxial wafer in grinding and polishing process |
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