Mini-LED chip and preparation method thereof

According to the mini-LED chip and the preparation method provided by the invention, in the mini-LED chip, the ohmic contact resistance of the composite transparent conductive layer is reduced by the ohmic contact layer in the composite transparent conductive layer, the ohmic contact with the P-type...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: CAI JIANJIU, LIU WEI, WU XINGEN, WANG RUI, CUI HENGPING, LIU YINGCE, LIN FENGJIE
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:According to the mini-LED chip and the preparation method provided by the invention, in the mini-LED chip, the ohmic contact resistance of the composite transparent conductive layer is reduced by the ohmic contact layer in the composite transparent conductive layer, the ohmic contact with the P-type layer is improved, the electron concentration and the current expansion capability are improved by the first transparent conductive layer, and the light emitting efficiency is improved. The second transparent conductive layer improves the penetration rate of the conductive film, the two transparent conductive layers further improve the current conduction capability and the ESD resistance capability, the nano layer improves the adhesion and the thrust reliability of the chip, and the composite transparent conductive layer improves the heat dissipation capability of the chip and reduces the generation of a heat effect. In addition, the adhesion between the composite DBR reflecting layer and the composite transparent