Semiconductor structure

A semiconductor structure includes a semiconductor fin protruding from a substrate, a dielectric fin disposed adjacent to and substantially parallel to the semiconductor fin, an epitaxial source/drain (S/D) feature disposed in the semiconductor fin, a dielectric layer disposed between a sidewall of...

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Hauptverfasser:	LIU CHANGMIAO, LIU GECHENG, ZHENG MINGLONG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	LIU CHANGMIAO LIU GECHENG ZHENG MINGLONG
description	A semiconductor structure includes a semiconductor fin protruding from a substrate, a dielectric fin disposed adjacent to and substantially parallel to the semiconductor fin, an epitaxial source/drain (S/D) feature disposed in the semiconductor fin, a dielectric layer disposed between a sidewall of the epitaxial S/D feature and a sidewall of the dielectric fin, and an air gap disposed in the dielectric layer. 一种半导体结构，包含从基板突出的半导体鳍片、与半导体鳍片相邻且大致上平行设置的介电鳍片、设置于半导体鳍片中的外延源极/漏极(S/D)部件、设置于外延S/D部件的侧壁与介电鳍片的侧壁之间的介电层、以及设置于介电层中的气隙。
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	Semiconductor structure
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