Dual-mode size InAs/GaAs quantum dot growth method, quantum dot and quantum dot composition

The invention discloses a dual-mode size InAs/GaAs quantum dot growth method, a quantum dot and a quantum dot composition, and the method comprises the following steps: S1, setting a first temperature, and depositing InAs of n atomic layers on a GaAs substrate on which a GaAs buffer layer grows, n b...

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Bibliographische Detailangaben
Hauptverfasser:	ZHU ZEQUN, GENG BIAO, ZHANG GAOJUN, PENG CHANGSI, HAN ZHAOXIANG, SHI ZHENWU, QI QIUYUE
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ADHESIVES CHEMISTRY DYES MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NANOTECHNOLOGY NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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