Dual-mode size InAs/GaAs quantum dot growth method, quantum dot and quantum dot composition
The invention discloses a dual-mode size InAs/GaAs quantum dot growth method, a quantum dot and a quantum dot composition, and the method comprises the following steps: S1, setting a first temperature, and depositing InAs of n atomic layers on a GaAs substrate on which a GaAs buffer layer grows, n b...
Gespeichert in:
| Hauptverfasser: | , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | ZHU ZEQUN GENG BIAO ZHANG GAOJUN PENG CHANGSI HAN ZHAOXIANG SHI ZHENWU QI QIUYUE |
| description | The invention discloses a dual-mode size InAs/GaAs quantum dot growth method, a quantum dot and a quantum dot composition, and the method comprises the following steps: S1, setting a first temperature, and depositing InAs of n atomic layers on a GaAs substrate on which a GaAs buffer layer grows, n being greater than 1.4 and less than 1.7; s2, a second temperature is set, annealing is carried out, quantum dot crystal nucleuses are formed, and the second temperature is lower than the first temperature; and S3, at the second temperature, InAs of a 1.7-n atomic layer continues to be deposited, first quantum dots are formed by the quantum dot crystal nucleuses, second quantum dots are formed on the surface of the atomic layer between the first quantum dots when the deposition amount reaches 1.7 atomic layers, and the size of the second quantum dots is smaller than that of the first quantum dots. According to the invention, the dual-mode size is realized, and the quantum dot with an adjustable proportion between th |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN114907848A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN114907848A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN114907848A3</originalsourceid><addsrcrecordid>eNrjZIh2KU3M0c3NT0lVKM6sSlXwzHMs1ndPdCxWKCxNzCspzVVIyS9RSC_KLy_JUMhNLcnIT9FBkUrMS0HhJ-fnFuQXZ5Zk5ufxMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JJ4Zz9DQxNLA3MLEwtHY2LUAAAIFjsE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Dual-mode size InAs/GaAs quantum dot growth method, quantum dot and quantum dot composition</title><source>esp@cenet</source><creator>ZHU ZEQUN ; GENG BIAO ; ZHANG GAOJUN ; PENG CHANGSI ; HAN ZHAOXIANG ; SHI ZHENWU ; QI QIUYUE</creator><creatorcontrib>ZHU ZEQUN ; GENG BIAO ; ZHANG GAOJUN ; PENG CHANGSI ; HAN ZHAOXIANG ; SHI ZHENWU ; QI QIUYUE</creatorcontrib><description>The invention discloses a dual-mode size InAs/GaAs quantum dot growth method, a quantum dot and a quantum dot composition, and the method comprises the following steps: S1, setting a first temperature, and depositing InAs of n atomic layers on a GaAs substrate on which a GaAs buffer layer grows, n being greater than 1.4 and less than 1.7; s2, a second temperature is set, annealing is carried out, quantum dot crystal nucleuses are formed, and the second temperature is lower than the first temperature; and S3, at the second temperature, InAs of a 1.7-n atomic layer continues to be deposited, first quantum dots are formed by the quantum dot crystal nucleuses, second quantum dots are formed on the surface of the atomic layer between the first quantum dots when the deposition amount reaches 1.7 atomic layers, and the size of the second quantum dots is smaller than that of the first quantum dots. According to the invention, the dual-mode size is realized, and the quantum dot with an adjustable proportion between th</description><language>chi ; eng</language><subject>ADHESIVES ; CHEMISTRY ; DYES ; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NANOTECHNOLOGY ; NATURAL RESINS ; PAINTS ; PERFORMING OPERATIONS ; POLISHES ; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES ; TRANSPORTING</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220816&DB=EPODOC&CC=CN&NR=114907848A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220816&DB=EPODOC&CC=CN&NR=114907848A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZHU ZEQUN</creatorcontrib><creatorcontrib>GENG BIAO</creatorcontrib><creatorcontrib>ZHANG GAOJUN</creatorcontrib><creatorcontrib>PENG CHANGSI</creatorcontrib><creatorcontrib>HAN ZHAOXIANG</creatorcontrib><creatorcontrib>SHI ZHENWU</creatorcontrib><creatorcontrib>QI QIUYUE</creatorcontrib><title>Dual-mode size InAs/GaAs quantum dot growth method, quantum dot and quantum dot composition</title><description>The invention discloses a dual-mode size InAs/GaAs quantum dot growth method, a quantum dot and a quantum dot composition, and the method comprises the following steps: S1, setting a first temperature, and depositing InAs of n atomic layers on a GaAs substrate on which a GaAs buffer layer grows, n being greater than 1.4 and less than 1.7; s2, a second temperature is set, annealing is carried out, quantum dot crystal nucleuses are formed, and the second temperature is lower than the first temperature; and S3, at the second temperature, InAs of a 1.7-n atomic layer continues to be deposited, first quantum dots are formed by the quantum dot crystal nucleuses, second quantum dots are formed on the surface of the atomic layer between the first quantum dots when the deposition amount reaches 1.7 atomic layers, and the size of the second quantum dots is smaller than that of the first quantum dots. According to the invention, the dual-mode size is realized, and the quantum dot with an adjustable proportion between th</description><subject>ADHESIVES</subject><subject>CHEMISTRY</subject><subject>DYES</subject><subject>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NANOTECHNOLOGY</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>PERFORMING OPERATIONS</subject><subject>POLISHES</subject><subject>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIh2KU3M0c3NT0lVKM6sSlXwzHMs1ndPdCxWKCxNzCspzVVIyS9RSC_KLy_JUMhNLcnIT9FBkUrMS0HhJ-fnFuQXZ5Zk5ufxMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JJ4Zz9DQxNLA3MLEwtHY2LUAAAIFjsE</recordid><startdate>20220816</startdate><enddate>20220816</enddate><creator>ZHU ZEQUN</creator><creator>GENG BIAO</creator><creator>ZHANG GAOJUN</creator><creator>PENG CHANGSI</creator><creator>HAN ZHAOXIANG</creator><creator>SHI ZHENWU</creator><creator>QI QIUYUE</creator><scope>EVB</scope></search><sort><creationdate>20220816</creationdate><title>Dual-mode size InAs/GaAs quantum dot growth method, quantum dot and quantum dot composition</title><author>ZHU ZEQUN ; GENG BIAO ; ZHANG GAOJUN ; PENG CHANGSI ; HAN ZHAOXIANG ; SHI ZHENWU ; QI QIUYUE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN114907848A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>ADHESIVES</topic><topic>CHEMISTRY</topic><topic>DYES</topic><topic>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NANOTECHNOLOGY</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>PERFORMING OPERATIONS</topic><topic>POLISHES</topic><topic>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>ZHU ZEQUN</creatorcontrib><creatorcontrib>GENG BIAO</creatorcontrib><creatorcontrib>ZHANG GAOJUN</creatorcontrib><creatorcontrib>PENG CHANGSI</creatorcontrib><creatorcontrib>HAN ZHAOXIANG</creatorcontrib><creatorcontrib>SHI ZHENWU</creatorcontrib><creatorcontrib>QI QIUYUE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZHU ZEQUN</au><au>GENG BIAO</au><au>ZHANG GAOJUN</au><au>PENG CHANGSI</au><au>HAN ZHAOXIANG</au><au>SHI ZHENWU</au><au>QI QIUYUE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Dual-mode size InAs/GaAs quantum dot growth method, quantum dot and quantum dot composition</title><date>2022-08-16</date><risdate>2022</risdate><abstract>The invention discloses a dual-mode size InAs/GaAs quantum dot growth method, a quantum dot and a quantum dot composition, and the method comprises the following steps: S1, setting a first temperature, and depositing InAs of n atomic layers on a GaAs substrate on which a GaAs buffer layer grows, n being greater than 1.4 and less than 1.7; s2, a second temperature is set, annealing is carried out, quantum dot crystal nucleuses are formed, and the second temperature is lower than the first temperature; and S3, at the second temperature, InAs of a 1.7-n atomic layer continues to be deposited, first quantum dots are formed by the quantum dot crystal nucleuses, second quantum dots are formed on the surface of the atomic layer between the first quantum dots when the deposition amount reaches 1.7 atomic layers, and the size of the second quantum dots is smaller than that of the first quantum dots. According to the invention, the dual-mode size is realized, and the quantum dot with an adjustable proportion between th</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN114907848A |
| source | esp@cenet |
| subjects | ADHESIVES CHEMISTRY DYES MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NANOTECHNOLOGY NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING |
| title | Dual-mode size InAs/GaAs quantum dot growth method, quantum dot and quantum dot composition |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T19%3A49%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ZHU%20ZEQUN&rft.date=2022-08-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN114907848A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |