Miniature light emitting diode, preparation method thereof and display panel

Miniature light emitting diode, preparation method thereof and display panel

The invention discloses a miniature light emitting diode, a preparation method thereof and a display panel. The miniature light-emitting diode comprises an epitaxial laminated layer and a current expansion layer, the upper surface of the epitaxial laminated layer comprises an ohmic contact region an...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: LI SHUIQING, PENG YUREN, WANG YANQIN, GUO HUANSHAO, HUANG SHAOHUA
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator LI SHUIQING
PENG YUREN
WANG YANQIN
GUO HUANSHAO
HUANG SHAOHUA
description The invention discloses a miniature light emitting diode, a preparation method thereof and a display panel. The miniature light-emitting diode comprises an epitaxial laminated layer and a current expansion layer, the upper surface of the epitaxial laminated layer comprises an ohmic contact region and a non-ohmic contact region, and the non-ohmic contact region at least comprises an outer edge region located on the periphery of the upper surface of the epitaxial laminated layer; the surface of the outer edge area is subjected to ion implantation treatment; and the current expansion layer is positioned on the ohmic contact region. The miniature light-emitting diode can realize low-current density efficiency improvement. 本发明公开一种微型发光二极管及其制备方法和显示面板。所述微型发光二极管包括外延叠层和电流扩展层，所述外延叠层的上表面包括欧姆接触区和非欧姆接触区，所述非欧姆接触区至少包括位于所述外延叠层上表面周边的外边缘区；所述外边缘区的表面经过离子注入处理；所述电流扩展层位于所述欧姆接触区上。所述微型发光二极管能够实现小电流密度效率提升。
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN114864761A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN114864761A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN114864761A3</originalsourceid><addsrcrecordid>eNqNyqEOwjAQBuAaBAHe4fAgGpaBJQsEASj8cqH_1ku6tmkPwduD4AFQn_nm5nqTKKyvAgoyeiVMoipxJCfJYUO5IHNhlRRpgvrkSD0K0kAc3XfVHPhNmSPC0swGDhWrnwuzPp8e3WWLnHrUzE9EaN_drW0ObbNv7XH3z_kAtps2Aw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Miniature light emitting diode, preparation method thereof and display panel</title><source>esp@cenet</source><creator>LI SHUIQING ; PENG YUREN ; WANG YANQIN ; GUO HUANSHAO ; HUANG SHAOHUA</creator><creatorcontrib>LI SHUIQING ; PENG YUREN ; WANG YANQIN ; GUO HUANSHAO ; HUANG SHAOHUA</creatorcontrib><description>The invention discloses a miniature light emitting diode, a preparation method thereof and a display panel. The miniature light-emitting diode comprises an epitaxial laminated layer and a current expansion layer, the upper surface of the epitaxial laminated layer comprises an ohmic contact region and a non-ohmic contact region, and the non-ohmic contact region at least comprises an outer edge region located on the periphery of the upper surface of the epitaxial laminated layer; the surface of the outer edge area is subjected to ion implantation treatment; and the current expansion layer is positioned on the ohmic contact region. The miniature light-emitting diode can realize low-current density efficiency improvement. 本发明公开一种微型发光二极管及其制备方法和显示面板。所述微型发光二极管包括外延叠层和电流扩展层，所述外延叠层的上表面包括欧姆接触区和非欧姆接触区，所述非欧姆接触区至少包括位于所述外延叠层上表面周边的外边缘区；所述外边缘区的表面经过离子注入处理；所述电流扩展层位于所述欧姆接触区上。所述微型发光二极管能够实现小电流密度效率提升。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220805&amp;DB=EPODOC&amp;CC=CN&amp;NR=114864761A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220805&amp;DB=EPODOC&amp;CC=CN&amp;NR=114864761A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LI SHUIQING</creatorcontrib><creatorcontrib>PENG YUREN</creatorcontrib><creatorcontrib>WANG YANQIN</creatorcontrib><creatorcontrib>GUO HUANSHAO</creatorcontrib><creatorcontrib>HUANG SHAOHUA</creatorcontrib><title>Miniature light emitting diode, preparation method thereof and display panel</title><description>The invention discloses a miniature light emitting diode, a preparation method thereof and a display panel. The miniature light-emitting diode comprises an epitaxial laminated layer and a current expansion layer, the upper surface of the epitaxial laminated layer comprises an ohmic contact region and a non-ohmic contact region, and the non-ohmic contact region at least comprises an outer edge region located on the periphery of the upper surface of the epitaxial laminated layer; the surface of the outer edge area is subjected to ion implantation treatment; and the current expansion layer is positioned on the ohmic contact region. The miniature light-emitting diode can realize low-current density efficiency improvement. 本发明公开一种微型发光二极管及其制备方法和显示面板。所述微型发光二极管包括外延叠层和电流扩展层，所述外延叠层的上表面包括欧姆接触区和非欧姆接触区，所述非欧姆接触区至少包括位于所述外延叠层上表面周边的外边缘区；所述外边缘区的表面经过离子注入处理；所述电流扩展层位于所述欧姆接触区上。所述微型发光二极管能够实现小电流密度效率提升。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyqEOwjAQBuAaBAHe4fAgGpaBJQsEASj8cqH_1ku6tmkPwduD4AFQn_nm5nqTKKyvAgoyeiVMoipxJCfJYUO5IHNhlRRpgvrkSD0K0kAc3XfVHPhNmSPC0swGDhWrnwuzPp8e3WWLnHrUzE9EaN_drW0ObbNv7XH3z_kAtps2Aw</recordid><startdate>20220805</startdate><enddate>20220805</enddate><creator>LI SHUIQING</creator><creator>PENG YUREN</creator><creator>WANG YANQIN</creator><creator>GUO HUANSHAO</creator><creator>HUANG SHAOHUA</creator><scope>EVB</scope></search><sort><creationdate>20220805</creationdate><title>Miniature light emitting diode, preparation method thereof and display panel</title><author>LI SHUIQING ; PENG YUREN ; WANG YANQIN ; GUO HUANSHAO ; HUANG SHAOHUA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN114864761A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LI SHUIQING</creatorcontrib><creatorcontrib>PENG YUREN</creatorcontrib><creatorcontrib>WANG YANQIN</creatorcontrib><creatorcontrib>GUO HUANSHAO</creatorcontrib><creatorcontrib>HUANG SHAOHUA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LI SHUIQING</au><au>PENG YUREN</au><au>WANG YANQIN</au><au>GUO HUANSHAO</au><au>HUANG SHAOHUA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Miniature light emitting diode, preparation method thereof and display panel</title><date>2022-08-05</date><risdate>2022</risdate><abstract>The invention discloses a miniature light emitting diode, a preparation method thereof and a display panel. The miniature light-emitting diode comprises an epitaxial laminated layer and a current expansion layer, the upper surface of the epitaxial laminated layer comprises an ohmic contact region and a non-ohmic contact region, and the non-ohmic contact region at least comprises an outer edge region located on the periphery of the upper surface of the epitaxial laminated layer; the surface of the outer edge area is subjected to ion implantation treatment; and the current expansion layer is positioned on the ohmic contact region. The miniature light-emitting diode can realize low-current density efficiency improvement. 本发明公开一种微型发光二极管及其制备方法和显示面板。所述微型发光二极管包括外延叠层和电流扩展层，所述外延叠层的上表面包括欧姆接触区和非欧姆接触区，所述非欧姆接触区至少包括位于所述外延叠层上表面周边的外边缘区；所述外边缘区的表面经过离子注入处理；所述电流扩展层位于所述欧姆接触区上。所述微型发光二极管能够实现小电流密度效率提升。</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language chi ; eng
recordid cdi_epo_espacenet_CN114864761A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Miniature light emitting diode, preparation method thereof and display panel
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T02%3A28%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LI%20SHUIQING&rft.date=2022-08-05&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN114864761A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true