Method for preparing single-layer MoS2/WS2 two-component gradient material by one-step method
The invention relates to a method for preparing a single-layer MoS2/WS2 two-component gradient material by a one-step method, which belongs to the field of inorganic nano semiconductor materials, and comprises the following steps of: compacting powdered sulfur on one side of a corundum boat by using...
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| creator | NIE ANMIN LIU ZHONGYUAN ZHAI KUN XIANG JIANYONG TIAN YONGJUN WANG BOCHONG MOU CONGPU WEN FUSHENG XUE TIANYU KANG MENGKE |
| description | The invention relates to a method for preparing a single-layer MoS2/WS2 two-component gradient material by a one-step method, which belongs to the field of inorganic nano semiconductor materials, and comprises the following steps of: compacting powdered sulfur on one side of a corundum boat by using a medicine spoon, sealing and wrapping the corundum boat containing the powdered sulfur by using aluminum-foil paper, pricking a small hole in the side containing the powdered sulfur by using a fine steel needle, and sealing the corundum boat by using a sealing strip; then placing a corundum boat containing powdered sulfur in an upstream low-temperature area of the multi-temperature-area tubular furnace; sequentially and separately placing a mixture of tungsten oxide powder and NaCl and molybdenum oxide powder at the upstream of a long corundum boat, placing a substrate at the downstream of the long corundum boat, and then placing the long corundum boat in a downstream high-temperature area of a multi-temperature- |
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then placing a corundum boat containing powdered sulfur in an upstream low-temperature area of the multi-temperature-area tubular furnace; sequentially and separately placing a mixture of tungsten oxide powder and NaCl and molybdenum oxide powder at the upstream of a long corundum boat, placing a substrate at the downstream of the long corundum boat, and then placing the long corundum boat in a downstream high-temperature area of a multi-temperature-</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F</subject><subject>COMPOUNDS THEREOF</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>INORGANIC CHEMISTRY</subject><subject>METALLURGY</subject><subject>NON-METALLIC ELEMENTS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIj1TS3JyE9RSMsvUigoSi1ILMrMS1coBhI5qbo5iZWpRQq--cFG-uHBRgol5fm6yfm5Bfl5qXklCulFiSmZIEZuYklqUWZijkJSpQJQSre4JLVAIRdsLA8Da1piTnEqL5TmZlB0cw1x9tBNLciPTy0uSExOzUstiXf2MzQ0sTAzMbYwcjQmRg0Ames7lA</recordid><startdate>20220805</startdate><enddate>20220805</enddate><creator>NIE ANMIN</creator><creator>LIU ZHONGYUAN</creator><creator>ZHAI KUN</creator><creator>XIANG JIANYONG</creator><creator>TIAN YONGJUN</creator><creator>WANG BOCHONG</creator><creator>MOU CONGPU</creator><creator>WEN FUSHENG</creator><creator>XUE TIANYU</creator><creator>KANG MENGKE</creator><scope>EVB</scope></search><sort><creationdate>20220805</creationdate><title>Method for preparing single-layer MoS2/WS2 two-component gradient material by one-step method</title><author>NIE ANMIN ; 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then placing a corundum boat containing powdered sulfur in an upstream low-temperature area of the multi-temperature-area tubular furnace; sequentially and separately placing a mixture of tungsten oxide powder and NaCl and molybdenum oxide powder at the upstream of a long corundum boat, placing a substrate at the downstream of the long corundum boat, and then placing the long corundum boat in a downstream high-temperature area of a multi-temperature-</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F COMPOUNDS THEREOF DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Method for preparing single-layer MoS2/WS2 two-component gradient material by one-step method |
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