Method for preparing single-layer MoS2/WS2 two-component gradient material by one-step method

The invention relates to a method for preparing a single-layer MoS2/WS2 two-component gradient material by a one-step method, which belongs to the field of inorganic nano semiconductor materials, and comprises the following steps of: compacting powdered sulfur on one side of a corundum boat by using a medicine spoon, sealing and wrapping the corundum boat containing the powdered sulfur by using aluminum-foil paper, pricking a small hole in the side containing the powdered sulfur by using a fine steel needle, and sealing the corundum boat by using a sealing strip; then placing a corundum boat containing powdered sulfur in an upstream low-temperature area of the multi-temperature-area tubular furnace; sequentially and separately placing a mixture of tungsten oxide powder and NaCl and molybdenum oxide powder at the upstream of a long corundum boat, placing a substrate at the downstream of the long corundum boat, and then placing the long corundum boat in a downstream high-temperature area of a multi-temperature-