Semi-insulating compound semiconductor substrate and semi-insulating compound semiconductor single crystal
The invention relates to a semi-insulating compound semiconductor substrate and a semi-insulating compound semiconductor single crystal. A semi-insulating compound semiconductor substrate includes a semi-insulating compound semiconductor, the semi-insulating compound semiconductor substrate being co...
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| creator | KONOIKE KAZUAKI HASHIO KATSUSHI YANAGISAWA TAKUYA |
| description | The invention relates to a semi-insulating compound semiconductor substrate and a semi-insulating compound semiconductor single crystal. A semi-insulating compound semiconductor substrate includes a semi-insulating compound semiconductor, the semi-insulating compound semiconductor substrate being configured such that, on a main surface having a (100) plane orientation, at least one of a first surface and a second surface is formed along a tilt direction from a center of the main surface, and a tilt direction along a tilt direction from a center of the main surface. 110gt, 110gt; a standard deviation/average value of specific resistance measured at an interval of 0.1 mm in four equivalent directions of the directions and lt from the center of the main surface; 100 gt; the standard deviation/average value of the specific resistance measured at an interval of 0.1 mm in each of four equivalent directions of the directions is 0.1 or less.
本发明涉及半绝缘性化合物半导体基板和半绝缘性化合物半导体单晶。一种半绝缘性化合物半导体基板，其包含半绝缘性化合物半导体，所述半绝缘性化合物半导体基板被构 |
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本发明涉及半绝缘性化合物半导体基板和半绝缘性化合物半导体单晶。一种半绝缘性化合物半导体基板，其包含半绝缘性化合物半导体，所述半绝缘性化合物半导体基板被构</description><language>chi ; eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; METALLURGY ; PHYSICS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; TESTING ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220805&DB=EPODOC&CC=CN&NR=114855260A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220805&DB=EPODOC&CC=CN&NR=114855260A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KONOIKE KAZUAKI</creatorcontrib><creatorcontrib>HASHIO KATSUSHI</creatorcontrib><creatorcontrib>YANAGISAWA TAKUYA</creatorcontrib><title>Semi-insulating compound semiconductor substrate and semi-insulating compound semiconductor single crystal</title><description>The invention relates to a semi-insulating compound semiconductor substrate and a semi-insulating compound semiconductor single crystal. A semi-insulating compound semiconductor substrate includes a semi-insulating compound semiconductor, the semi-insulating compound semiconductor substrate being configured such that, on a main surface having a (100) plane orientation, at least one of a first surface and a second surface is formed along a tilt direction from a center of the main surface, and a tilt direction along a tilt direction from a center of the main surface. 110gt, 110gt; a standard deviation/average value of specific resistance measured at an interval of 0.1 mm in four equivalent directions of the directions and lt from the center of the main surface; 100 gt; the standard deviation/average value of the specific resistance measured at an interval of 0.1 mm in each of four equivalent directions of the directions is 0.1 or less.
本发明涉及半绝缘性化合物半导体基板和半绝缘性化合物半导体单晶。一种半绝缘性化合物半导体基板，其包含半绝缘性化合物半导体，所述半绝缘性化合物半导体基板被构</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>METALLURGY</subject><subject>PHYSICS</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>TESTING</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZMgKTs3N1M3MKy7NSSzJzEtXSM7PLcgvzUtRKAZKJOfnpZQml-QXKRSXJhWXFCWWpCokQuWI0QSUy0lVSC6qLC5JzOFhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGJhampkZmBo7GxKgBAI5ZQt8</recordid><startdate>20220805</startdate><enddate>20220805</enddate><creator>KONOIKE KAZUAKI</creator><creator>HASHIO KATSUSHI</creator><creator>YANAGISAWA TAKUYA</creator><scope>EVB</scope></search><sort><creationdate>20220805</creationdate><title>Semi-insulating compound semiconductor substrate and semi-insulating compound semiconductor single crystal</title><author>KONOIKE KAZUAKI ; HASHIO KATSUSHI ; YANAGISAWA TAKUYA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN114855260A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>METALLURGY</topic><topic>PHYSICS</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>TESTING</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>KONOIKE KAZUAKI</creatorcontrib><creatorcontrib>HASHIO KATSUSHI</creatorcontrib><creatorcontrib>YANAGISAWA TAKUYA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KONOIKE KAZUAKI</au><au>HASHIO KATSUSHI</au><au>YANAGISAWA TAKUYA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semi-insulating compound semiconductor substrate and semi-insulating compound semiconductor single crystal</title><date>2022-08-05</date><risdate>2022</risdate><abstract>The invention relates to a semi-insulating compound semiconductor substrate and a semi-insulating compound semiconductor single crystal. A semi-insulating compound semiconductor substrate includes a semi-insulating compound semiconductor, the semi-insulating compound semiconductor substrate being configured such that, on a main surface having a (100) plane orientation, at least one of a first surface and a second surface is formed along a tilt direction from a center of the main surface, and a tilt direction along a tilt direction from a center of the main surface. 110gt, 110gt; a standard deviation/average value of specific resistance measured at an interval of 0.1 mm in four equivalent directions of the directions and lt from the center of the main surface; 100 gt; the standard deviation/average value of the specific resistance measured at an interval of 0.1 mm in each of four equivalent directions of the directions is 0.1 or less.
本发明涉及半绝缘性化合物半导体基板和半绝缘性化合物半导体单晶。一种半绝缘性化合物半导体基板，其包含半绝缘性化合物半导体，所述半绝缘性化合物半导体基板被构</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES METALLURGY PHYSICS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TESTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Semi-insulating compound semiconductor substrate and semi-insulating compound semiconductor single crystal |
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