Silicon controlled rectifier structure with novel triggering mode and manufacturing method thereof
The invention discloses a silicon controlled rectifier structure with a novel triggering mode and a manufacturing method thereof, and the silicon controlled rectifier structure comprises a main body structure, an electrode structure and an isolation structure. The main body structure comprises a fir...
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| creator | SHAO CHANGHAI |
| description | The invention discloses a silicon controlled rectifier structure with a novel triggering mode and a manufacturing method thereof, and the silicon controlled rectifier structure comprises a main body structure, an electrode structure and an isolation structure. The main body structure comprises a first emitting electrode, a first base region, a second base region and a second emitting electrode which are stacked in sequence. The electrode structure comprises a first electrode and a second electrode which are positioned on two sides of the main body structure; the first electrode and the second electrode cooperate to drive the main body structure to be conducted. The isolation structure includes a gate member and a third base region located on at least one side of the body structure and in contact with the first emitter and the second base region. The doped elements in the third base region and the second base region have the same characteristics; the gate pole component is in contact with the third base region |
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The main body structure comprises a first emitting electrode, a first base region, a second base region and a second emitting electrode which are stacked in sequence. The electrode structure comprises a first electrode and a second electrode which are positioned on two sides of the main body structure; the first electrode and the second electrode cooperate to drive the main body structure to be conducted. The isolation structure includes a gate member and a third base region located on at least one side of the body structure and in contact with the first emitter and the second base region. 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| language | chi ; eng |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Silicon controlled rectifier structure with novel triggering mode and manufacturing method thereof |
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