Semiconductor device

A semiconductor device includes a plurality of active region structures each protruding upward in a vertical direction. The active region structures each extend in a first horizontal direction. The active region structures are separated from each other in a second horizontal direction different from the first horizontal direction. A gate structure is disposed over the active region structure. The gate structure extends in a second horizontal direction. The gate structure partially surrounds each of the active region structures. A conductive cap layer is disposed over the gate structure. A gate via is disposed over the conductive cap layer. A dimension of the conductive cap layer measured in the second horizontal direction is substantially greater than a maximum dimension of the gate via measured in the second horizontal direction. 一种半导体装置，包括多个有源区结构，所述有源区结构各自在垂直方向上向上突出。有源区结构各自在第一水平方向上延伸。有源区结构在不同于第一水平方向的第二水平方向上彼此分离。栅极结构设置在有源区结构上方。栅极结构在第二水平方向上延伸。栅极结构部分包绕有源区结构的每一者。导电盖层设置在栅极结构上方。栅极导孔设置在导电盖层上方。导电盖层在第二水平方向上测量的尺寸实质上大