Solar cell and processing method thereof
The invention discloses a solar cell and a processing method thereof, and the method comprises the steps: providing a silicon substrate, and enabling one surface of the silicon substrate to be provided with a grid line contact region and a non-grid line contact region; forming a hole surface structu...
Gespeichert in:
Hauptverfasser: | , , , , , |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | ZHONG CHUNHUA WANG JIANBO MING WEIHUI PEI HAIYANG QIU JIANGNAN LYU JUN |
description | The invention discloses a solar cell and a processing method thereof, and the method comprises the steps: providing a silicon substrate, and enabling one surface of the silicon substrate to be provided with a grid line contact region and a non-grid line contact region; forming a hole surface structure in the grid line contact area; a first silicon oxide layer and a first polycrystalline silicon layer are sequentially deposited on the hole surface structure, the first polycrystalline silicon layer is formed in an in-situ doping deposition mode, and the first polycrystalline silicon layer has a first doping concentration; sequentially depositing a second silicon dioxide layer and a second polycrystalline silicon layer on the non-grid line contact region; doping the second polycrystalline silicon layer to obtain a second polycrystalline silicon layer with a second doping concentration, the second doping concentration being smaller than the first doping concentration; and forming a grid line in the grid line cont |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN114744056A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN114744056A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN114744056A3</originalsourceid><addsrcrecordid>eNrjZNAIzs9JLFJITs3JUUjMS1EoKMpPTi0uzsxLV8hNLcnIT1EoyUgtSs1P42FgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8c5-hoYm5iYmBqZmjsbEqAEAv4goLg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Solar cell and processing method thereof</title><source>esp@cenet</source><creator>ZHONG CHUNHUA ; WANG JIANBO ; MING WEIHUI ; PEI HAIYANG ; QIU JIANGNAN ; LYU JUN</creator><creatorcontrib>ZHONG CHUNHUA ; WANG JIANBO ; MING WEIHUI ; PEI HAIYANG ; QIU JIANGNAN ; LYU JUN</creatorcontrib><description>The invention discloses a solar cell and a processing method thereof, and the method comprises the steps: providing a silicon substrate, and enabling one surface of the silicon substrate to be provided with a grid line contact region and a non-grid line contact region; forming a hole surface structure in the grid line contact area; a first silicon oxide layer and a first polycrystalline silicon layer are sequentially deposited on the hole surface structure, the first polycrystalline silicon layer is formed in an in-situ doping deposition mode, and the first polycrystalline silicon layer has a first doping concentration; sequentially depositing a second silicon dioxide layer and a second polycrystalline silicon layer on the non-grid line contact region; doping the second polycrystalline silicon layer to obtain a second polycrystalline silicon layer with a second doping concentration, the second doping concentration being smaller than the first doping concentration; and forming a grid line in the grid line cont</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220712&DB=EPODOC&CC=CN&NR=114744056A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220712&DB=EPODOC&CC=CN&NR=114744056A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZHONG CHUNHUA</creatorcontrib><creatorcontrib>WANG JIANBO</creatorcontrib><creatorcontrib>MING WEIHUI</creatorcontrib><creatorcontrib>PEI HAIYANG</creatorcontrib><creatorcontrib>QIU JIANGNAN</creatorcontrib><creatorcontrib>LYU JUN</creatorcontrib><title>Solar cell and processing method thereof</title><description>The invention discloses a solar cell and a processing method thereof, and the method comprises the steps: providing a silicon substrate, and enabling one surface of the silicon substrate to be provided with a grid line contact region and a non-grid line contact region; forming a hole surface structure in the grid line contact area; a first silicon oxide layer and a first polycrystalline silicon layer are sequentially deposited on the hole surface structure, the first polycrystalline silicon layer is formed in an in-situ doping deposition mode, and the first polycrystalline silicon layer has a first doping concentration; sequentially depositing a second silicon dioxide layer and a second polycrystalline silicon layer on the non-grid line contact region; doping the second polycrystalline silicon layer to obtain a second polycrystalline silicon layer with a second doping concentration, the second doping concentration being smaller than the first doping concentration; and forming a grid line in the grid line cont</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAIzs9JLFJITs3JUUjMS1EoKMpPTi0uzsxLV8hNLcnIT1EoyUgtSs1P42FgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8c5-hoYm5iYmBqZmjsbEqAEAv4goLg</recordid><startdate>20220712</startdate><enddate>20220712</enddate><creator>ZHONG CHUNHUA</creator><creator>WANG JIANBO</creator><creator>MING WEIHUI</creator><creator>PEI HAIYANG</creator><creator>QIU JIANGNAN</creator><creator>LYU JUN</creator><scope>EVB</scope></search><sort><creationdate>20220712</creationdate><title>Solar cell and processing method thereof</title><author>ZHONG CHUNHUA ; WANG JIANBO ; MING WEIHUI ; PEI HAIYANG ; QIU JIANGNAN ; LYU JUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN114744056A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ZHONG CHUNHUA</creatorcontrib><creatorcontrib>WANG JIANBO</creatorcontrib><creatorcontrib>MING WEIHUI</creatorcontrib><creatorcontrib>PEI HAIYANG</creatorcontrib><creatorcontrib>QIU JIANGNAN</creatorcontrib><creatorcontrib>LYU JUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZHONG CHUNHUA</au><au>WANG JIANBO</au><au>MING WEIHUI</au><au>PEI HAIYANG</au><au>QIU JIANGNAN</au><au>LYU JUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Solar cell and processing method thereof</title><date>2022-07-12</date><risdate>2022</risdate><abstract>The invention discloses a solar cell and a processing method thereof, and the method comprises the steps: providing a silicon substrate, and enabling one surface of the silicon substrate to be provided with a grid line contact region and a non-grid line contact region; forming a hole surface structure in the grid line contact area; a first silicon oxide layer and a first polycrystalline silicon layer are sequentially deposited on the hole surface structure, the first polycrystalline silicon layer is formed in an in-situ doping deposition mode, and the first polycrystalline silicon layer has a first doping concentration; sequentially depositing a second silicon dioxide layer and a second polycrystalline silicon layer on the non-grid line contact region; doping the second polycrystalline silicon layer to obtain a second polycrystalline silicon layer with a second doping concentration, the second doping concentration being smaller than the first doping concentration; and forming a grid line in the grid line cont</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | chi ; eng |
recordid | cdi_epo_espacenet_CN114744056A |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Solar cell and processing method thereof |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T08%3A43%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ZHONG%20CHUNHUA&rft.date=2022-07-12&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN114744056A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |