Spin diode device

Spin diode device

The invention relates to a spin diode device. According to various embodiments, a spin diode device may include a magnetic tunnel junction stack. The magnetic tunnel junction stack may include a lower magnetic layer, a tunnel barrier layer over the lower magnetic layer, and an upper magnetic layer o...

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Hauptverfasser: WONG, GREGORY, D. H, YOO WON-SANG, LAW, WILLIAM, C, YAMANE KAZUTAKA, HEATER, CHRISTOPHER, S
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ELECTRICITY
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creator WONG, GREGORY, D. H
YOO WON-SANG
LAW, WILLIAM, C
YAMANE KAZUTAKA
HEATER, CHRISTOPHER, S
description The invention relates to a spin diode device. According to various embodiments, a spin diode device may include a magnetic tunnel junction stack. The magnetic tunnel junction stack may include a lower magnetic layer, a tunnel barrier layer over the lower magnetic layer, and an upper magnetic layer over the tunnel barrier layer. The lower magnetic layer may include a lower magnetic film. The tunnel barrier layer includes an insulating material. The upper magnetic layer may include an upper magnetic film. Each of the lower magnetic film and the upper magnetic film may have perpendicular magnetic anisotropy. 本公开涉及一种自旋二极管器件。根据各种实施例，一种自旋二极管器件可以包括磁隧道结堆叠。磁隧道结堆叠可以包括下磁性层、位于下磁性层上方的隧道势垒层、以及位于隧道势垒层上方的上磁性层。下磁性层可以包括下磁性膜。隧道势垒层包括绝缘材料。上磁性层可以包括上磁性膜。下磁性膜和上磁性膜中的每一者可以具有垂直磁各向异性。
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN114695652A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN114695652A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN114695652A3</originalsourceid><addsrcrecordid>eNrjZBAMLsjMU0jJzE9JVUhJLctMTuVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGJmaWpmamRo7GxKgBALLkH1U</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Spin diode device</title><source>esp@cenet</source><creator>WONG, GREGORY, D. H ; YOO WON-SANG ; LAW, WILLIAM, C ; YAMANE KAZUTAKA ; HEATER, CHRISTOPHER, S</creator><creatorcontrib>WONG, GREGORY, D. H ; YOO WON-SANG ; LAW, WILLIAM, C ; YAMANE KAZUTAKA ; HEATER, CHRISTOPHER, S</creatorcontrib><description>The invention relates to a spin diode device. According to various embodiments, a spin diode device may include a magnetic tunnel junction stack. The magnetic tunnel junction stack may include a lower magnetic layer, a tunnel barrier layer over the lower magnetic layer, and an upper magnetic layer over the tunnel barrier layer. The lower magnetic layer may include a lower magnetic film. The tunnel barrier layer includes an insulating material. The upper magnetic layer may include an upper magnetic film. Each of the lower magnetic film and the upper magnetic film may have perpendicular magnetic anisotropy. 本公开涉及一种自旋二极管器件。根据各种实施例，一种自旋二极管器件可以包括磁隧道结堆叠。磁隧道结堆叠可以包括下磁性层、位于下磁性层上方的隧道势垒层、以及位于隧道势垒层上方的上磁性层。下磁性层可以包括下磁性膜。隧道势垒层包括绝缘材料。上磁性层可以包括上磁性膜。下磁性膜和上磁性膜中的每一者可以具有垂直磁各向异性。</description><language>chi ; eng</language><subject>ELECTRICITY</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220701&amp;DB=EPODOC&amp;CC=CN&amp;NR=114695652A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220701&amp;DB=EPODOC&amp;CC=CN&amp;NR=114695652A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WONG, GREGORY, D. H</creatorcontrib><creatorcontrib>YOO WON-SANG</creatorcontrib><creatorcontrib>LAW, WILLIAM, C</creatorcontrib><creatorcontrib>YAMANE KAZUTAKA</creatorcontrib><creatorcontrib>HEATER, CHRISTOPHER, S</creatorcontrib><title>Spin diode device</title><description>The invention relates to a spin diode device. According to various embodiments, a spin diode device may include a magnetic tunnel junction stack. The magnetic tunnel junction stack may include a lower magnetic layer, a tunnel barrier layer over the lower magnetic layer, and an upper magnetic layer over the tunnel barrier layer. The lower magnetic layer may include a lower magnetic film. The tunnel barrier layer includes an insulating material. The upper magnetic layer may include an upper magnetic film. Each of the lower magnetic film and the upper magnetic film may have perpendicular magnetic anisotropy. 本公开涉及一种自旋二极管器件。根据各种实施例，一种自旋二极管器件可以包括磁隧道结堆叠。磁隧道结堆叠可以包括下磁性层、位于下磁性层上方的隧道势垒层、以及位于隧道势垒层上方的上磁性层。下磁性层可以包括下磁性膜。隧道势垒层包括绝缘材料。上磁性层可以包括上磁性膜。下磁性膜和上磁性膜中的每一者可以具有垂直磁各向异性。</description><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAMLsjMU0jJzE9JVUhJLctMTuVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGJmaWpmamRo7GxKgBALLkH1U</recordid><startdate>20220701</startdate><enddate>20220701</enddate><creator>WONG, GREGORY, D. H</creator><creator>YOO WON-SANG</creator><creator>LAW, WILLIAM, C</creator><creator>YAMANE KAZUTAKA</creator><creator>HEATER, CHRISTOPHER, S</creator><scope>EVB</scope></search><sort><creationdate>20220701</creationdate><title>Spin diode device</title><author>WONG, GREGORY, D. H ; YOO WON-SANG ; LAW, WILLIAM, C ; YAMANE KAZUTAKA ; HEATER, CHRISTOPHER, S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN114695652A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>WONG, GREGORY, D. H</creatorcontrib><creatorcontrib>YOO WON-SANG</creatorcontrib><creatorcontrib>LAW, WILLIAM, C</creatorcontrib><creatorcontrib>YAMANE KAZUTAKA</creatorcontrib><creatorcontrib>HEATER, CHRISTOPHER, S</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WONG, GREGORY, D. H</au><au>YOO WON-SANG</au><au>LAW, WILLIAM, C</au><au>YAMANE KAZUTAKA</au><au>HEATER, CHRISTOPHER, S</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Spin diode device</title><date>2022-07-01</date><risdate>2022</risdate><abstract>The invention relates to a spin diode device. According to various embodiments, a spin diode device may include a magnetic tunnel junction stack. The magnetic tunnel junction stack may include a lower magnetic layer, a tunnel barrier layer over the lower magnetic layer, and an upper magnetic layer over the tunnel barrier layer. The lower magnetic layer may include a lower magnetic film. The tunnel barrier layer includes an insulating material. The upper magnetic layer may include an upper magnetic film. Each of the lower magnetic film and the upper magnetic film may have perpendicular magnetic anisotropy. 本公开涉及一种自旋二极管器件。根据各种实施例，一种自旋二极管器件可以包括磁隧道结堆叠。磁隧道结堆叠可以包括下磁性层、位于下磁性层上方的隧道势垒层、以及位于隧道势垒层上方的上磁性层。下磁性层可以包括下磁性膜。隧道势垒层包括绝缘材料。上磁性层可以包括上磁性膜。下磁性膜和上磁性膜中的每一者可以具有垂直磁各向异性。</abstract><oa>free_for_read</oa></addata></record>
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title Spin diode device
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